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  1. 4781
    “…Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. …”
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    Ferroelectric Switching in Trilayer Al(2)O(3)/HfZrO(x)/Al(2)O(3) Structure
  2. 4782
    “…In this study, an integrated artificially intelligent tactile learning electronic skin (e‐skin) based on arrays of ferroelectric‐gate field‐effect transistors with dome‐shape tactile top‐gates, which can simultaneously sense and learn from a variety of tactile information, is introduced. …”
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    Artificially Intelligent Tactile Ferroelectric Skin
  3. 4783
    “…Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (<1 nW Hz(−)(1/2)) and high responsivities (>100 V/W). …”
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    Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy
  4. 4784
    “…This work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. …”
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    Clean-Room Lithographical Processes for the Fabrication of Graphene Biosensors
  5. 4785
    “…This paper presents a second-generation ASIC that employed an improved switch design to minimize clock feedthrough and charge-injection effects of high-voltage metal–oxide–semiconductor field-effect transistors (HV MOSFETs), which in the first-generation ASIC caused parasitic transmissions and associated imaging artifacts. …”
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    Design of an Ultrasound Transceiver ASIC with a Switching-Artifact Reduction Technique for 3D Carotid Artery Imaging
  6. 4786
    “…FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals, as anticipated from the linear band dispersions. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. …”
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    High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications
  7. 4787
    “…There is an urgent need for the development of elastic dielectric materials for flexible organic field effect transistors (OFETs). In this work, detailed analysis of the AC and DC electrical conductivity of a series of flexible poly(dimethylsiloxane) (PDMS) polymers crosslinked by metal-ligand coordination in comparison to neat PDMS was performed for the first time by means of broadband dielectric spectroscopy. …”
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    Effects of Counter Anions on AC and DC Electrical Conductivity in Poly(Dimethylsiloxane) Crosslinked by Metal-Ligand Coordination
  8. 4788
    “…Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. …”
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    High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles
  9. 4789
    “…Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. …”
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    The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids
  10. 4790
    “…[Image: see text] The high thermal conductivity, high electron mobility, the direct wide band gap, and large exciton binding energy of zinc oxide (ZnO) make it appropriate for a wide range of device applications like light-emitting diodes, photodetectors, laser diodes, transparent thin-film transistors, and so forth. Among the semiconductor metal oxides, zinc oxide (ZnO) is one of the most commonly used gas-sensing materials. …”
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    Annealing Effects on Gas Sensing Response of Ga-Doped ZnO Thin Films
  11. 4791
    “…Finally, fully stretchable transistors fabricated with our newly designed stretchable semiconductors exhibit the highest and most stable mobility retention capability under repeated strains of 1,000 cycles. …”
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    A design strategy for high mobility stretchable polymer semiconductors
  12. 4792
    “…The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. …”
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    On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs
  13. 4793
    “…The findings highlight the realistic potential applications of such abnormal CaCl material with unusual electronic properties in designing novel transistors and magnetic devices, hydrogen storage, catalyzers, high-performance conducting electrodes and sensors, with a size down to atomic scale.…”
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    Novel 2D CaCl crystals with metallicity, room-temperature ferromagnetism, heterojunction, piezoelectricity-like property and monovalent calcium ions
  14. 4794
    “…Built on an electrochemical gating principle, the fiber-woven-type transistors exhibit superior bending or stretching robustness, and were woven as a textile logical computing module to distinguish different emergencies. …”
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    A non-printed integrated-circuit textile for wireless theranostics
  15. 4795
    “…Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N′-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). …”
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    Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)
  16. 4796
    “…These whiskers are compatible with current CMOS process and Thin Film Transistors (TFTs).…”
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    Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization
  17. 4797
    “…This work presents a technique to reduce the LC-VCOs phase noise using a new current-shaping method based on a feedback injection mechanism with only two additional transistors. This technique consists of keeping the negative resistance seen from LC tank constant throughout the oscillation cycle, achieving a significant phase noise reduction with a very low area increase. …”
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    A New Current-Shaping Technique Based on a Feedback Injection Mechanism to Reduce VCO Phase Noise
  18. 4798
    por Yuan, Jin, Dai, Jian-Qing, Ke, Cheng
    Publicado 2021
    “…Furthermore, our study predicts that MoS(2)-based ferroelectric field-effect transistors and various types of seamless p–i, n–i, p–n, p(+)–p, and n(+)–n homojunctions possessing an extremely steep built-in electric field can be fabricated by reversing the ferroelectric polarization and/or patterning the domain structure of the BAO(0001) substrate.…”
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    Electrostatic Modulation and Mechanism of the Electronic Properties of Monolayer MoS(2) via Ferroelectric BiAlO(3)(0001) Polar Surfaces
  19. 4799
    “…PI cured under various temperatures (260 °C, 360 °C, and 460 °C) was implemented in metal–insulator–metal (MIM) capacitors, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFT), and actual display panels to analyze device stability and panel product characteristics. …”
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    Effects of polyimide curing on image sticking behaviors of flexible displays
  20. 4800
    “…Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner. …”
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    Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF(4) Based Process Conditions
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