“…Each detector consists of only 11 transistors and an integration capacitor with a unit dimension of 0.0015 mm(2). …”
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“…To study the electron transport properties, we have fabricated field-effect transistors based on LPE cylindrite. Flakes are deterministically positioned between nanoscale electrodes by dielectrophoresis. …”
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“…Open circuit failure mode in insulated-gate bipolar transistors (IGBT) is one of the most common faults in modular multilevel converters (MMCs). …”
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“…The variations in the degradation of electrical characteristics resulting from different device structures for trench-gate SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are investigated in this work. …”
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“…Hf(x)Zr(1−x)O(2) (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (P(r)) and fatigue endurance of these films. …”
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“…Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature.…”
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“…[Image: see text] Photo-switchable organic field-effect transistors (OFETs) represent an important platform for designing memory devices for a diverse array of products including security (brand-protection, copy-protection, keyless entry, etc.), credit cards, tickets, and multiple wearable organic electronics applications. …”
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“…Moreover, the so-prepared PRC-DPP6T field-effect transistors displayed a much narrower performance distribution and comparable mobility when compared with those based on SM-DPP6T (0.17 vs. 0.15 cm(2) V(−1) s(−1)). …”
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“…The results reveal that i) the azide groups make the side chains to be photo‐cross‐linkable; ii) uniform patterns with size as small as 5 µm form under mild UV irradiation (365 nm, 85 mW cm(−2)) at ambient conditions; iii) such photo‐induced cross‐linking does not affect the inter‐chain packing; iv) benefiting from the single component feature, field‐effect transistors (FETs) with the individual patterned thin films display satisfactorily uniform performances with average charge mobility of 0.61 ± 0.10 cm(2) V(–1) s(–1) and threshold voltage of 3.49 ± 1.43 V. …”
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“…The compound forms high‐crystallinity thin films and has high monopolar electron transport in organic field‐effect transistors, with an average mobility of 1.01 cm(2) V(−1) s(−1) for edge‐cast films.…”
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“…At this time, the development of advanced elastic dielectric materials for use in organic devices, particularly in organic field-effect transistors, is of considerable interest to the scientific community. …”
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“…Most likely, the optical computer has not been put into mass production because there are still no good solutions for optical transistors, optical memory, and much more that acceptance to break the huge inertia of many proven technologies in electronics.…”
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“…The newly configured TAI adopts the additive capacitor [Formula: see text] with the cascode approach, and in the subthreshold region, one of the transistors functions as the TAI. The study, simulations, and measurements were performed using 65nm CMOS technology. …”
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“…On the other hand, several experiments prove that macroscopic label‐free sensors based on field‐effect‐transistors, engaging micrometric or millimetric detecting interfaces are capable to assay a single‐molecule in a large volume within few minutes. …”
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“…The electrical properties of the CVD-grown MoS(2) show promising performance from fabricated field-effect transistors. This work provides new insight into the growth of large-area MoS(2) and opens the way for its various optoelectronic and electronic applications.…”
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“…As the demand for flexible organic light-emitting diodes (OLEDs) grows beyond that for rigid OLEDs, various elements of OLEDs, such as thin-film transistors, electrodes, thin-film encapsulations (TFEs), and touch screen panels, have been developed to overcome OLEDs’ physical and chemical limitations through material and structural design. …”
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“…As a result, continuous work on conventional semiconductor-process-compatible ferroelectric memory devices such as ferroelectric field-effect transistors, ferroelectric random-access memory, and dynamic random-access memory (DRAM) cell capacitors is ongoing. …”
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“…Its application in thin film transistors and flexible or transparent semiconductor devices is highly suggested.…”
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“…Combining adjustable threshold push–pull stage (ATPS) and master–slave power transistors topology, the proposed LDO maintains a three-stage structure within the full load range. …”
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“…We present a multi-bit IMC system for HDC using ferroelectric field-effect transistors (FeFETs) that simultaneously achieves software-equivalent-accuracies, reduces the dimensionality of the HDC system, and improves energy consumption by 826x and latency by 30x when compared to a GPU baseline. …”
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