“…Thus, the proposed architecture could increase the input pulse amplitudes applied to the main transistors in the power amplifiers, hence increasing the output voltage of such amplifiers. …”
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“…Nonlinear plasmonic effects in perspective 2D materials containing low-dimensional quantum emitters can be a basis of a novel technological platform for the fabrication of fast all-plasmonic triggers, transistors, and sensors. This article considers the conditions for achieving a strong coupling between the surface plasmon–polariton (SPP) and quantum emitter taking into account the modification of local density of optical states in graphene waveguide. …”
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“…It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time significantly decrease. …”
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“…Lastly, the electrical transfer characteristics on CdTe and ZnTe nanostructure-based field-effect transistors clearly showed that the conduction of the nanostructures can be rationally tuned into n- and p-type conductivity with BV and F4-TCNQ adsorptions, respectively. …”
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“…Particularly, mobile ultrasound applications have strict battery performance and current consumption requirements; hence, amplifier devices should exhibit good efficiency because the direct current (DC) voltage in the battery are provided to the supply voltages of the amplifier, thus limiting the maximum DC drain voltages of the main transistors in the amplifier. The maximum DC drain voltages are related with maximum output power if the choke inductor in the amplifier is used. …”
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“…SL-based buffers therefore represent a viable solution for the fabrication of high voltage GaN transistors on silicon substrate, and for the simultaneous reduction of trapping processes.…”
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“…Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. …”
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“…To test the impact protection ability, we compared the performance of thin-film heaters (TFHs) and oxide-semiconductor-based thin-film transistors (TFTs) with and without SiOC cover films. …”
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“…The charge conduction across our protein biopolymers, reaching nearly 0.01 S cm(−1), along with the simplicity and low-cost of their formation promotes their use in a variety of optoelectronic devices, such as artificial photosynthesis, photo-responsive protonic–electronic transistors, and photodetectors.…”
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“…Molybdenum disulphide (MoS(2)) is a rising star among transition-metal dichalcogenides in photovoltaics, diodes, electronic circuits, transistors and as a photocatalyst for hydrogen evolution. …”
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“…Electrochemical doping is not only the fundamental mechanism in organic electrochemical transistors (OECTs), used in biomedical sensors, but it also represents an ideal playground for fundamental studies. …”
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“…When processed at a low temperature of 200 °C, organic thin-film transistors (OTFTs) with pentacene channel adopting high-k Neodymium-Titanium oxynitride mixtures (NdTiON) with various Ti contents as gate dielectrics are fabricated. …”
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“…The charge transport, electroluminescence, and photoelectric properties are compared in thin-film organic field-effect transistors based on CF(3)-PTTP-CF(3) and its N-substituted counterpart. …”
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“…All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10(−4) to 10(−2) cm(2) V(−1) s(−1) with the highest hole mobility of up to 1.43 × 10(−2) cm(2) V(−1) s(−1) achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high V(oc)'s of 0.81–0.87 V when PCBM or ITIC was used as acceptor. …”
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“…Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO(2)/Si substrate to measure the transfer curves. …”
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“…ZnO nanoparticles are widely used for the industrial-scale manufacture of microelectronic and optoelectronic devices, including metal oxide semiconductor (MOS) gas sensors, light-emitting diodes, transistors, capacitors, and solar cells. This study proposes optimization of synthesis parameters of nanosized ZnO by the electrospinning technique. …”
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“…The MoTe(2) field-effect transistors (FETs) with a MoO(x) interlayer exhibited two orders of magnitude higher field-effect hole mobility of 6.31 cm(2) V(−1) s(−1) with a high on/off current ratio of ∼10(5) than that of the MoTe(2) device with conventional metal contacts (0.07 cm(2) V(−1) s(−1)). …”
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“…The LO-RF isolation is more than 15 dB over the entire measurement band (0.2 to 67 GHz) as the RF and LO signals are applied to different transistors owing to the cascode structure. The total power consumption is only within 12 mW, and the chip size is 0.056 mm(2), making it possible to implement a compact mixer. …”
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“…Conjugated polymer (CP)-based organic field-effect transistors (OFETs) have been considered a potential sensor platform for detecting gas molecules because they can amplify sensing signals by controlling the gate voltage. …”
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“…Using biology concepts from chromosomal storage, nucleic acid processing as well as polymer material sciences such as electronical effects in enzymes, graphene, nanocellulose up to DNA macramé , DNA wires and DNA-based aptamer field effect transistors will open up new applications gradually replacing classical information storage methods in ever more areas over time (decades).…”
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