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  1. 4901
    por Li, Lei, Liang, Lizhi, Wu, Heng, Zhu, Xinhua
    Publicado 2016
    “…Fundamental physical properties of one-dimensional perovskite manganite nanostructures are also highlighted, and a range of unique applications in information storages, field-effect transistors, and spintronic devices are discussed. Finally, we conclude this review with some perspectives/outlook and future researches in these fields.…”
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    One-Dimensional Perovskite Manganite Oxide Nanostructures: Recent Developments in Synthesis, Characterization, Transport Properties, and Applications
  2. 4902
    “…Using this methodology, solution processed all inorganic thin film transistors (TFTs) with charge carrier mobilities exceeding 6 cm(2) V(–1) s(–1) operating at low voltage (5 V) have been achieved. …”
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    Identification of dipole disorder in low temperature solution processed oxides: its utility and suppression for transparent high performance solution-processed hybrid electronics
  3. 4903
    “…The versatility of this scalable route is demonstrated by the fabrication of large-area thin-film transistors (TFTs), optoelectronic devices, and integrated circuits on a 4-inch Si wafer and 2.5-inch borosilicate glass substrates in ambient air using CdS, CdSe, and In(2)Se(3) active layers. …”
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    High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes
  4. 4904
    “…Few-layer black phosphorus (BP) nanosheets were first reported as a 2D material for the application of field-effect transistors in 2014 and have stimulated intense activity among physicists, chemists, and material and biomedical scientists, driving research into novel synthetic techniques to produce BP nanosheets. …”
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    Facile bottom-up synthesis of partially oxidized black phosphorus nanosheets as metal-free photocatalyst for hydrogen evolution
  5. 4905
    “…While melt-processed single-component OSC devices (e.g. field-effect-transistors) have been demonstrated, multi-component bulk heterojunctions (BHJs) for organic photovoltaics (OPVs) remain a challenge. …”
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    Melt-processing of small molecule organic photovoltaics via bulk heterojunction compatibilization
  6. 4906
    “…Simply put, hMSCs are no different than technologies like transistors, as they are a highly technical and modular product that requires stringent control over manufacturing that can allow for high quality and consistent performance. …”
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    Peak MSC—Are We There Yet?
  7. 4907
    “…The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher‐speed transistors based on an InN channel.…”
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    High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
  8. 4908
    “…Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. …”
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    Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
  9. 4909
    “…[Image: see text] InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. …”
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    Highly Photoconductive InP Quantum Dots Films and Solar Cells
  10. 4910
    “…In addition, the exfoliated MoS(2) flakes of critical thicknesses exhibit prominent interlayer twisting features on their cleaved surfaces. Field-effect transistors made from these MoS(2) flakes exhibit multiple (or quasi-analog-tunable) charge memory states. …”
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    Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide
  11. 4911
    “…The effects of diffuse Cu(+) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on the microstructure and performance during a clean etch stopper (CL-ES) process and a back channel etch (BCE) process are investigated and compared. …”
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    Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure
  12. 4912
    “…To demonstrate the versatility of our approach, we fabricated melt-spun PEDOT:Nafion fibers, which are highly flexible, retain their conductivity of about 3 S cm(–1) upon stretching to 100% elongation, and can be used to construct organic electrochemical transistors (OECTs). Furthermore, we demonstrate the precise 3D printing of complex conducting structures from OECTs to centimeter-sized PEDOT:Nafion figurines and millimeter-thick 100-leg thermoelectric modules on textile substrates. …”
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    All-Polymer Conducting Fibers and 3D Prints via Melt Processing and Templated Polymerization
  13. 4913
    “…Aluminum oxide ([Formula: see text] )-based single-electron transistors (SETs) fabricated in ultra-high vacuum (UHV) chambers using in situ plasma oxidation show excellent stabilities over more than a week, enabling applications as tunnel barriers, capacitor dielectrics or gate insulators in close proximity to qubit devices. …”
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    Reduction of charge offset drift using plasma oxidized aluminum in SETs
  14. 4914
    “…The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO(2) gate dielectric layer. …”
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    Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
  15. 4915
    “…After 17 months of ink storage, transistors with a maximum linear mobility for electrons of 8.5 × 10(–3) cm(2)/V s are fabricated; this value is 17% of the one obtained with fresh solutions. …”
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    On the Colloidal Stability of PbS Quantum Dots Capped with Methylammonium Lead Iodide Ligands
  16. 4916
    “…The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. …”
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    Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices
  17. 4917
    “…A simple, convenient, and highly sensitive bio-interface for graphene field-effect transistors (GFETs) based on multifunctional nano-denatured bovine serum albumin (nano-dBSA) functionalization was developed to target cancer biomarkers. …”
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    Novel Graphene Biosensor Based on the Functionalization of Multifunctional Nano-bovine Serum Albumin for the Highly Sensitive Detection of Cancer Biomarkers
  18. 4918
    “…Here, we developed a portable bifunctional electrical detector based on graphene fieldeffect transistors for SARS-CoV-2 through either nucleic acid hybridization or antigen-antibody protein interaction, with ultra-low limits of detection of ~0.1 and ~1 fg mL(−1) in phosphate buffer saline, respectively. …”
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    An accurate, high-speed, portable bifunctional electrical detector for COVID-19
  19. 4919
    “…Biosensors based on liquid-gated carbon nanotubes field-effect transistors (LG-CNTFETs) have attracted considerable attention, as they offer high sensitivity and selectivity; quick response and label-free detection. …”
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    Chemical-free and scalable process for the fabrication of a uniform array of liquid-gated CNTFET, evaluated by KCl electrolyte
  20. 4920
    “…[Image: see text] The molecule 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) is an organic semiconductor with outstanding performance in thin-film transistors. The asymmetric shape of the molecule causes an unusual phase behavior, which is a result of a distinct difference in the molecular arrangement between the head-to-head stacking of the molecules versus head-to-tail stacking. …”
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    Molecular Disorder in Crystalline Thin Films of an Asymmetric BTBT Derivative
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