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  1. 4921
    “…For organic devices such as diodes and transistors, higher charge carrier mobilities are paramount to achieve high performance. …”
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    Doped Highly Crystalline Organic Films: Toward High‐Performance Organic Electronics
  2. 4922
    “…Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier from 10 to 30 nm owing to the increase in piezoelectric polarization-induced two-dimensional electron gas (2-DEG). …”
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    Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
  3. 4923
    “…Using V‐doped WSe(2) as vdW contact, the on‐state current and on/off ratio of WSe(2)‐based field‐effect transistors have been substantially improved (from ≈10(–8) to 10(–5) A; ≈10(4) to 10(8)), compared to metal contacts. …”
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    Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics
  4. 4924
    “…For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge(0.8)Si(0.2) was considered. …”
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    Investigation on Ge(0.8)Si(0.2)-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice
  5. 4925
    “…In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF applications. …”
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    Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
  6. 4926
    “…More importantly, the observation of clear current-rectifying effects produced at the semiconductor heterojunctions with properly selected contacting faces or planes implies that novel field-effect transistors (FETs) can be fabricated using this design strategy, which should integrate well with current chip manufacturing processes.…”
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    Current Rectification and Photo-Responsive Current Achieved through Interfacial Facet Control of Cu(2)O–Si Wafer Heterojunctions
  7. 4927
    “…The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O(2), exhibited p-type doping behavior, whereas those exposed in vacuum and pure N(2) gas showed n-type doping. …”
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    Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction
  8. 4928
    “…This finding may assist in the future development of MoS(2)-based electronic and optoelectronic devices such as transistors and photodetectors.…”
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    Millimeter-Scale Continuous Film of MoS(2) Synthesized Using a Mo, Na, and Seeding Promoter-Based Coating as a Solid Precursor
  9. 4929
    “…However, analog circuits are sensitive to process-induced variation among transistors in a chip (“device mismatch”). For neuromorphic implementation of Spiking Neural Networks (SNNs), mismatch causes parameter variation between identically-configured neurons and synapses. …”
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    Supervised training of spiking neural networks for robust deployment on mixed-signal neuromorphic processors
  10. 4930
    “…Hafnium oxide (HfO(x)) films have a wide range of applications in solid-state devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs). The growth of HfO(x) films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO(3))(3)·6H(2)O solution (LNS) as an oxidant was investigated. …”
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    Microstructures of HfO(x) Films Prepared via Atomic Layer Deposition Using La(NO(3))(3)·6H(2)O Oxidants
  11. 4931
    “…However, this is crucial for the fabrication of field-effect transistors (FETs). In this work, the atomic layer deposition growth of sub-5 nm La(2)O(3)/Al(2)O(3) nanolaminates on MoS(2) using different oxidants (H(2)O and O(3)) was investigated. …”
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    Atomic Layer Deposition of Ultrathin La(2)O(3)/Al(2)O(3) Nanolaminates on MoS(2) with Ultraviolet Ozone Treatment
  12. 4932
    “…Finally, applications of D–A polymers in optoelectronic devices (organic solar cells and field-effect transistors) and in bio-imaging are explained quoting appropriate examples.…”
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    Implementing the donor–acceptor approach in electronically conducting copolymers via electropolymerization
  13. 4933
    “…The prospect of 2‐dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide‐bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high‐electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO(3)‐based heterostructures. …”
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    Oxide Two‐Dimensional Electron Gas with High Mobility at Room‐Temperature
  14. 4934
    “…In this study, threshold voltage (V(th)) variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15–22 nm and various channel diameters (D(NW)) of 7, 9, and 12 nm. …”
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    Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters
  15. 4935
    “…The custom memristors used NMOS selector transistors, made available on a second 180 nm CMOS chip. …”
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    A CMOS–memristor hybrid system for implementing stochastic binary spike timing-dependent plasticity
  16. 4936
    “…The AlN thin films investigated in this study have excellent material properties, and the proposed process could be a less expensive method of growing high-quality GaN thin films for various applications in GaN-based power transistors and Si integrated circuits.…”
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    Optimal Growth Conditions for Forming c-Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering
  17. 4937
    “…[Image: see text] This article reports an improvement in the performance of the hafnium oxide-based (HfO(2)) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer (IL) engineering and READ-voltage optimization. …”
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    Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO(2)-Based FeFETs for In-Memory-Computing Applications
  18. 4938
    “…The objective is the future development of electro-photonic systems in the same c-Si wafer, containing transistors, sensors, LEDs and waveguides. Two different heterojunction LEDs were fabricated consisting of PIN and PIN(+)N structures, where a-Si(1−x)C(x):H thin films were used as P-type and I-type layers, while an N-type c-Si substrate was used as an active part of the device. …”
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    Development of Heterojunction c-Si/a-Si(1−x)C(x):H PIN Light-Emitting Diodes
  19. 4939
    “…We obtained rapid and sensitive virus detection beyond the Debye length limitation by exploiting aptamers coupled with alkaline phosphatases, which catalytically generate free hydrogen ions which can readily be measured on pH meters or ion-sensitive field-effect transistors. Furthermore, we demonstrated the detection of the viruses of approximately 100 copies/μL in 10 min, surpassing the capability of typical immunochromatographic assays. …”
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    Electrical biosensing system utilizing ion-producing enzymes conjugated with aptamers for the sensing of severe acute respiratory syndrome coronavirus 2
  20. 4940
    “…Ion-sensitive field-effect transistors (ISFETs) detect specific ions in solutions that enable straightforward, fast, and inexpensive sensors compared to other benchtop equipment. …”
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    The Integration of Reference Electrode for ISFET Ion Sensors Using Fluorothiophenol-Treated rGO
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