“…In this work, we have synthesized MoSe(2) and WSe(2) nanosheets (NSs) via a liquid-phase exfoliation method and investigated these NSs as channel materials in field-effect transistors (FET). The x-ray diffraction (XRD) pattern revealed that the synthesized NSs have a 2H phase with 0.65 nm d-spacing which belongs to the (002) Miller plane. …”
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“…This book addresses an intriguing engineering challenge, namely the design of an enormous maze of wires, which run in about a dozen metal layers above billions of transistors in a modern processor. The physical insight, mathematical rigor and methodological approach described in the book, are essential for engineers and computer architects, as they develop new systems of ever-increasing complexity and migrate them to new generations of device technologies.  …”
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“…A signal-to-noise of 10.9:1 was achieved, and is envisaged to increase to ~17:1 with the reduction in noise in the production readout chip with the use of enclosed layout transistors in the critical regions of the front-end.…”
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“…Radiation Field Effect Transistors (RadFETs) integrated in the RadMON specifically measure the Total Ionizing Dose (TID) in the accelerators complex and are affected in turn by the CERN radiation field. …”
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“…We introduce the definition of key performance parameters of three organic devices: organic field effect transistors (OFET), organic photovoltaics (OPV), and organic thermoelectric generators (TE). …”
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“…In addition, different types of biosensors such as optical biosensors, organic thin film transistors (OTFT), and conjugated polymer hydrogels (CPHs) based on CPs are also summarized and presented.…”
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“…A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al(2)O(3)/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD) and in situ N(2) plasma annealing (NPA). …”
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“…In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al(2)O(3) core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. …”
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“…The processor uses 8-micron technology and has only about 4,200 transistors. Vintage electronics may have a number of important advantages for applications where two parties need to simultaneously establish trust in the hardware used. …”
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“…Organic or molecular electronics is a hot topic dealing with the combination of π-conjugated organic compounds and polymers with specific properties (e.g., chirality) which can be exploited to construct optoelectronic devices, such as organic light-emitting diodes (OLEDs), organic photovoltaic (OPV) high efficiency cells, switchable chirality devices, organic field-effect transistors (OFETs), and so on. ORD spectroscopy was applied to study either the gigantic optical rotation of PLLA films, as well as to detect successfully the excitonic coupling, occurring in thin solid PLLA green film loaded with a combination of two dyes: SY96 (a pyrazolone dye) and PB16 (the metal-free phthalocyanine pigment). …”
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“…These characteristic features of nanoparticles can be explored for various other applications such as computer transistors, chemical sensors, electrometers, memory schemes, reusable catalysts, biosensing, antimicrobial activity, nanocomposites, medical imaging, tumor detection and drug delivery. …”
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“…Second detector is a pH-sensing device, called ion-selective field-effect transistors (ISFET). The ISFET is based on the current through the ISFET arising according to the H(+) concentration in solution. …”
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“…These results enrich the fundamental understanding of the Rashba effect in 2D semiconductors, which can be promising candidates for spin field-effect transistors (FETs) in experiments.…”
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“…β-Ga(2)O(3), a semiconductor material, has attracted considerable attention given its potential applications in high-power devices, such as high-performance field-effect transistors. For decades, β-Ga(2)O(3) has been processed through chemical mechanical polishing (CMP). …”
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“…The resulting TIA was fabricated in 65 nm CMOS technology for logic and mixed-mode designs, using low-threshold voltage transistors and a supply voltage of ±1.2 V. It exhibited a 52 dBΩ transimpedance gain and a 1.1 GHz bandwidth, consuming 55.3 mW using a ±1.2 V supply. …”
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“…Hydrogenated polycrystalline In(2)O(3) (In(2)O(3):H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (μ(FE)) exceeding 100 cm(2) V(−1) s(−1) are promising candidates for future electronics applications. …”
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“…In this paper, we report on the design and performance of an extraordinary low-cost THz imaging system relying on a InP Gunn diode emitter, paraffin wax optics, and commercially available GaAs high-electron-mobility transistors (HEMTs) with a gate length of 200 nm as the sensing elements in a room temperature environment. …”
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“…Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. …”
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“…Additionally, the combined clinical endpoint of death, stroke/transistoric ischaemic attack, tamponade, device embolisation, device-related thrombosis or peridevice leakage was reduced in WM FLX. …”
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“…The fabricated top-gate MoS(2) transistors showed intrinsic properties without doping effects, exhibiting on-off ratios of ~10(7), subthreshold swing down to 68 mV/dec, and lowest interface states of 7.6×10(9 )cm(−2) eV(−1). …”
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