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  1. 4981
    “…In order to obtain optimized elementary devices (photovoltaic modules, power transistors for energy efficiency, high-efficiency sensors) it is necessary to increase the energy conversion efficiency of these devices. …”
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  2. 4982
    “…These predicted electronic properties imply that the lanthanide-based MXenes could have potential applications in spintronics, information storage, near-infrared detectors, field effect transistors, and field emitter cathodes.…”
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  3. 4983
    “…This analysis of the fundamental properties of defective graphene under compression suggests a number of strategies for generating regular defect patterns with tuneable magnetic and electronic properties and may, therefore, be used as a novel technique to achieve more precise control of graphene electronic structure for various application scenarios such as transistors, strain sensors, and directed chemisorption.…”
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  4. 4984
    “…The nitrogenated holey two-dimensional carbon nitride ([Formula: see text]) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. …”
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  5. 4985
    “…In addition to being non-volatile, memristive devices are also characterized by the high switching frequency, low wattage requirement, and compact size. Traditional transistors can be replaced by silicon substrate-based FinFETs, which are substantially more efficient in terms of area and power, to improve the design. …”
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  6. 4986
    “…It counts about 1,700 transistors in total in 80x80um^2 pixels. The chip explores broadly the benefits of the 3D integration for pixel detectors, like full separation of analog and digital parts by placing them accordingly on distinct tiers, improved power distribution by using back-side located pads and almost no periphery for achieving 4-side buttability. …”
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    info:eu-repo/semantics/article
  7. 4987
  8. 4988
    “…To guarantee a trade-off between noise figure (NF) and small signal gain, the transmission lines are connected to the source of gallium nitride (GaN)-on-SiC high electron mobility transistors (HEMT) by analyzing the nonlinear small signal equivalent circuit. …”
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  9. 4989
    “…The wideband LNA proposed in this study is fabricated using a commercial 0.13 μm silicon-germanium (SiGe) BiCMOS process, employing SiGe heterojunction bipolar transistors (HBTs) as the circuit’s core active elements in the main branch. …”
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  10. 4990
    “…Major sensor configurations including graphene field-effect transistors, graphene modified electrodes and nanocomposites, and 3D graphene networks are highlighted along with their principles of operation, advantages, and biosensing capabilities. …”
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  11. 4991
    “…Molybdenum disulfide (MoS(2)) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>10(10)), immunity to short-channel effects, and unique switching characteristics. …”
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  12. 4992
    “…In the last two decades, organic field-effect transistors (OFETs) have garnered increasing attention from the scientific and industrial communities. …”
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  13. 4993
    “…By adjusting the alloy composition, the carrier type and carrier mobility of alloy-based field-effect transistors can be modulated. In particular, the adjustable conductivity of Mo(x)W((1−x))S(2y)Se(2(1−y)) alloys from n-type to bipolar type is achieved for the first time. …”
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  14. 4994
    “…Carbon nanotubes (CNT) have been developed in recent decades for nanodevices such as nanoradios, nanogenerators, carbon nanotube field effect transistors (CNTFETs) and so on, indicating that the application of CNTs for nanoscale electronics may play a key role in the development of nanotechnology. …”
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  15. 4995
    “…In application, this process results in aqueous printed materials with utility for solid-state charge transport in organic field effect transistors (OFETs), along with red to colorless electrochromism in ionic media for color changing displays, demonstrating its potential as a universal method for aqueous printing in organic electronics.…”
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  16. 4996
    “…In comparison, sensitive, facilely operated, electric-powered electrochemical outputs possess inherent advantages in terms of potential practicability and future integration with semiconductor transistors. Herein, taking an even pG/pC as a model device, we construct the first electrochemical DNA pG/pC system so far. …”
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  17. 4997
    “…[Image: see text] The laser crystallization (LC) of amorphous silicon thin films into polycrystalline silicon (pc-Si) thin films on glass substrates is an active field of research in the fabrication of Si-based thin film transistors and thin film solar cells. Efforts have been, in particular, focused on the improvement of LC technique. …”
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  18. 4998
    “…The absence of a band gap in graphene makes it of minor interest for field-effect transistors. Layered metal chalcogenides have shown great potential in device applications thanks to their wide bandgap and high carrier mobility. …”
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  19. 4999
    por Khan, Niazul I., Song, Edward
    Publicado 2021
    “…Aptamer-immobilized graphene field-effect transistors (GFETs) have become a well-known detection platform in the field of biosensing with various biomarkers such as proteins, bacteria, virus, as well as chemicals. …”
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  20. 5000
    “…Although diindenoacenes are one of the most developed families, only a few examples have been reported as active layers in organic field-effect transistors (OFETs) with a charge mobility of around 10(−3) cm(2) V(−1) s(−1) due to a steric disadvantage of the mesityl group to kinetically stabilize compounds. …”
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