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  1. 5041
    “…The purpose of this work is to characterize metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in MRgRT systems at 0.345 T magnetic field strength. …”
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  2. 5042
    “…[Image: see text] Out of the different structural phases of molybdenum ditelluride (MoTe(2)), the distorted octahedral 1T′ possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T′-MoTe(2) is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. …”
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  3. 5043
    “…[Image: see text] Polymerized ionic liquids (PILs) are a potential solution to the large-scale production of low-power consuming organic thin-film transistors (OTFTs). When used as the device gating medium in OTFTs, PILs experience a double-layer capacitance that enables thickness independent, low-voltage operation. …”
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  4. 5044
    “…The applicability of the method is demonstrated with highly conductive Al (∼5 × 10(–8) Ωm resistivity) utilized as transparent metal mesh conductors with ∼35 Ω(□) at 85% transparent area percentage and source/drain electrodes for solution-processed metal-oxide (In(2)O(3)) thin-film transistors with ∼1 cm(2)/(Vs) mobility. Moreover, the method is expected to be compatible with other printing methods and applicable in other flexible electronics applications, such as biosensors, resistive random access memories, touch screens, displays, photonics, and metamaterials, where the selection of current printable materials falls short.…”
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  5. 5045
    “…Furthermore, field-effect mobilities in the order of 10(–2) cm(2) V(–1) s(–1) in bottom-gate, top-contact organic field-effect transistors (OFETs) suggest an enhancement in charge transport due to the discotic electron-rich pyrene units that help mitigate the insulating effect of the methacrylate backbone. …”
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  6. 5046
    “…To achieve the S(11) parameters and current consumption specifications, the core and cascode transistors for high gain modes (18 dB, 12 dB, and 6 dB) and low gain modes (0 dB, −6 dB, and −12 dB) have been separated. …”
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  7. 5047
    “…In the present review, we show across 20 water monitoring analytes and 90 references that carbon nanotube-based electrochemical sensors, chemistors and field-effect transistors (chemFET) can meet these needs. A set of 126 additional references provide context and supporting information. …”
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  8. 5048
    “…The conduction band of ε-Fe(2)O(3), lying close to the valence band of α-Fe(2)O(3), can result in band-to-band tunneling of electrons which is a characteristic property of such type-III broken band-gap heterostructures and has potential applications in tunnel field-effect transistors.…”
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  9. 5049
    “…All three polymers are able to select for s-SWCNT, as evidenced by the sharp transitions in the absorption spectra. Field-effect transistors (FETs) fabricated with the polymer:SWCNT inks display p-dominant properties, with higher hole mobilities when using the NDI-TVT polymers as compared with PNDITEG-AH (0.6 cm(2) V(–1) s(–1) for HiPCO:PNDITEG-AH, 1.5 cm(2) V(–1) s(–1) for HiPCO:PNDITEG-TVT, and 2.3 cm(2) V(–1) s(–1) for HiPCO:PNDIC8TEG-TVT). …”
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  10. 5050
    “…In this context, the graphene/organic semiconductor (Gr/OSC) heterostructure could represent the core element to build future vertical organic transistors based on two back-to-back Gr/OSC diodes sharing a common graphene sheet, which functions as the base electrode. …”
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  11. 5051
    “…Thus, our study suggests that strain engineering is the best approach to modify or control the structural, electronic, magnetic, and mechanical properties of the TMD monolayer and nanoribbons which, therefore, open their potential applications in spintronics, photovoltaic cells, and tunneling field-effect transistors.…”
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  12. 5052
    por Xu, Youming, Guo, Shucheng, Chen, Xi
    Publicado 2022
    “…Owing to its unique optical, electrical, and optoelectrical properties, ZrSe(3) is promising for applications in field effect transistors, photodetectors, and thermoelectrics. Compared with extensive studies of the above-mentioned physical properties, the thermal properties of ZrSe(3) have not been experimentally investigated. …”
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  13. 5053
    “…π-Extended pyrene compounds possess remarkable luminescent and semiconducting properties and are being intensively investigated as electroluminescent materials for potential uses in organic light-emitting diodes, transistors, and solar cells. Here, the synthesis of two sets of pyrene-containing π-conjugated polyaromatic regioisomers, namely 2,3,10,11,14,15,20,21-octaalkyloxypentabenzo[a,c,m,o,rst]pentaphene (BBPn) and 2,3,6,7,13,14,17,18-octaalkyloxydibenzo[j,tuv]phenanthro [9,10-b]picene (DBPn), is reported. …”
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  14. 5054
  15. 5055
    “…The back side consisted of a thin film platinum heater and resistive temperature sensors to emulate the heat dissipation in transistors and measure the temperature, respectively. …”
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  16. 5056
    “…Therefore, we present a fabrication of large area Polymer/GO nano hybrid thin film for polymer thin film transistors (PTFTs) based NO(2) sensors assisted via facile method named ‘spreading-solidifying (SS) method’, grown over air/liquid interface and successive investigation of effect of NO(2) on film via several characterizations. …”
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  17. 5057
  18. 5058
    “…The thickness of the metal oxide layer influences on the resulting electrical sensitivity of the fabricated FETs (field effect transistors), with an optimum thickness of 3–4 nm. CONCLUSIONS: The core-shell structures display remarkable long-term morphological stability, preventing both, the chemical hydrolytic dissolution of the silicon under-structure and the concomitant loss of the siloxane-based chemical over-layers, for periods of at least several months. …”
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  19. 5059
    “…Highly photoluminescent hybrid lead halide perovskite nanoparticles have recently attracted wide interest in the context of high-stake applications, such as light emitting diodes (LEDs), light emitting transistors and lasers. In addition, they constitute ideal model systems to explore energy and charge transport phenomena occurring at the boundaries of nanocrystalline grains forming thin films in high-efficiency perovskite solar cells (PSCs). …”
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  20. 5060
    “…Metal oxide semiconductor field effect transistors (MOSFET) dosimetry was used to measure surface dose at four or five locations during patients’ first fraction of TBI. …”
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