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  1. 5061
    “…A pair of radiation dosimeters (RadFETs, i.e., radiation-sensitive field-effect transistors) within the SESLO payload provided an in-situ dose rate estimate of 6–7.6 mGy/day throughout the mission. …”
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  2. 5062
    “…Recently, ferroelectric field-effect transistors (FeFETs) are being explored as a promising alternative for building neuromorphic hardware by utilizing their non-volatile nature and rich polarization switching dynamics. …”
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  3. 5063
    “…Finally, we correlate the molecular packing to the device performance by fabricating field-effect transistors based on these two polymers. The charge carrier mobility of the ring-fused polymer PBDTT-DPPFu is significantly higher as compared to the PBDTT-DPP polymer without ring-fusion, although PBDTT-DPPFu exhibited a much lower number-average molecular weight of 17 kDa as compared to PBDTT-DPP with a molecular weight of 108 kDa. …”
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  4. 5064
    “…High-yield scalable methodologies optimized at the wafer level were employed to integrate multiple graphene transistors on small-size chips (4.5 × 4.5 mm). The multiple sensor array configuration permits independent and simultaneous replicate measurements of the same sample that produce robust average data, reducing sources of measurement variability. …”
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  5. 5065
  6. 5066
    “…Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material other than diamond. …”
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  7. 5067
    “…The performance and effectiveness of nanoscale devices, including transistors, solar cells, artificial antennas, quantum computers, and nano electronic circuits, must be improved in order to achieve a variety of benefits.…”
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  8. 5068
    por Ballabriga, Rafael
    Publicado 2009
    “…The chip was designed and manufactured in an 8-metal $0.13\mu m$ CMOS technology. It contains ~115M transistors. Measurements show an Equivalent Noise Charge of ~70e- rms (Single Pixel Mode) and ~140e- rms (Charge Summing Mode).…”
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  9. 5069
    “…METHODS: Reinforced TN-502RDM-H mobile metal oxide semiconductor field effect transistors (MOSFETs) and Gafchromic MD-55-2 films were used as a redundant in vivo treatment verification system with an Elekta Precise fixed linear accelerator for calibrations and treatments. …”
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  10. 5070
  11. 5071
    “…By varying the orientation of the embedded dipolar moieties, it is also possible to build p- and n-type organic transistors using the same electrode materials (Au). …”
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  12. 5072
    “…Eight hub genes including interleukin-6 (IL-6), interleukin-10 (IL-10), Toll-like receptor 4 (TLR4), signal transduction and transcriptional activation factor 3 (STAT3), C-X-C motif chemokine 10 (CXCL10), interleukin-17A (IL-17A), prostaglandin peroxide synthesis-2 (PTGS2), signal transistors, and transcriptional activation factor 6 (STAT6) were identified by gene ontology (GO), Kyoto Encyclopedia of Genes (KEGG), and PPI network analysis. …”
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  13. 5073
  14. 5074
    “…Nat Nanotechnol. 2012, 10, 180–184) or NW field-effect transistors (Qing, Q.; Jiang, Z.; Xu, L.; Gao, R.; Mai, L.; Lieber, C. …”
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  15. 5075
    “…Along with plastic solar cells (PSCs), these materials have extended to a number of different applications such as light-emitting diodes (LEDs) and field-effect transistors (FETs). Additionally, the topics of fluorene and carbazole as donor units in conjugated polymers are covered. …”
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  16. 5076
    por Kundumattathil Mohanan, Sarath
    Publicado 2022
    “…The use of thick gate transistors in the leakage critical analog path, optimal feedback capacitance and three stepped progressive charge balancing with 500 fC, 1 pC, and 4 pC charge paths helped in achieving this performance. …”
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  17. 5077
    por Torres Ramos, Arianna Grisel
    Publicado 2023
    “…$\newline$ Another subject, within the context of the ITS upgrade R&D, is the prelim- inary study of new sensor prototypes based on TPSCo 65 nm CMOS process, the first choice of the technology for the implementation of the wafer-scale sen- sor, which allows for more than four-fold increase of the number of transistors per pixel compared to the older 180 nm and higher spatial resolution resulting from the possibility to fabricate smaller pixels. …”
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  18. 5078
    por Dinapoli, Roberto
    Publicado 2004
    “…En particulier, le circuit ALICE1LHCb (ou Circuit Pixel) contient une matrice de 32 par 256 cellules de lecture (pour un total de 13 millions de transistors), mesurant 13.5 par 15.8 mm2. Des groupes de cinq circuits sont reliés électriquement par une technique de contact entre circuits sur des puces différentes, réalisés au moyen de rangées de billes métalliques microscopiques («bump-bonding»,). …”
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