Mostrando 541 - 560 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.56s Limitar resultados
  1. 541
    “…Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. …”
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  2. 542
  3. 543
    “…Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. …”
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  4. 544
    “…Carbon nanotubes (CNTs) used as semiconducting channels induce high mobility, thermal conductivity, mechanical flexibility, and chemical stability in field-effect, thin-film transistors (TFTs). However, the contact interfaces in CNT-TFTs have contact resistances that are difficult to reduce; this contact resistance can eventually limit the overall performance of CNT-TFTs. …”
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  5. 545
  6. 546
    “…We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. …”
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  7. 547
    “…A magneto-electrochemical cell and an electric double layer transistor (EDLT), each containing diluted [Bmim]FeCl(4) solution, have been controlled by applying a magnetic field in contrast to the control of conventional field effect devices by an applied electric field. …”
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  8. 548
    “…Herein, some of these challenges are addressed by designing a new class of nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advantages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry. …”
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  9. 549
    “…In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n(+)-p-n(+) silicon nanowire (SiNW) channels. …”
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  10. 550
    “…High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ(FE)) of 7.6 cm(2)/Vs, 140 mV/dec subthreshold slope, and 3 × 10(4) on-current/off-current were measured. …”
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  11. 551
    por Goodarzi, A., Ghanaatshoar, M.
    Publicado 2018
    “…This study aims to design an all-optical transistor based on tunneling of light through frustrated total internal reflection. …”
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  12. 552
    “…We describe a process allowing the patterning of fully stretchable organic electrochemical transistors (OECTs). The device consists of an active stretchable area connected with stretchable metallic interconnections. …”
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  13. 553
  14. 554
    “…A vertically movable gate field effect transistor (VMGFET) is proposed and demonstrated for a micro-accelerometer application. …”
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  15. 555
  16. 556
    “…Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels of enhanced injection. …”
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  17. 557
    “…This aim was accomplished through computations of efficiency of different DSCs based on n-Mosfet transistor. Transistor Z44 mosfet's impact on the DSC systems was to significantly moderate the effect of two vital components namel; the photoanodes and electrolyte sensitizers. …”
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  18. 558
    “…Therefore, in this study, a highly sensitive and robust biosensor platform was devised by fabricating graphene field effect transistors (graFET) on Si/SiO(2) substrate for the detection of chlorpyrifos in real samples. …”
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  19. 559
    “…In this work, we investigate both one-dimensional ZnO nanowires (NWs) and two-dimensional nanosheets (NSs) for high performance and stable nano-transistors on conventional Si/SiO(2) substrates. We have fabricated two variant of transistors based on nanoscale single-crystalline oxide materials: field-effect transistors (FETs) and source-gated transistors (SGTs). …”
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  20. 560
    “…Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). …”
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