“…Here, we combine screen-printing, high precision laser drilling and thermal evaporation, to fabricate organic field effect transistor (OFET) active-matrix (AM) arrays onto standard printer paper. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Low operating voltages have been long desired for thin-film transistors (TFTs). However, it is still challenging to realise 1-V operation by using conventional dielectrics due to their low gate capacitances and low breakdown voltages. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…This paper reports a 100% inkjet printed transistor with a short channel of approximately 1 µm with an operating speed up to 18.21 GHz. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Transistors with exfoliated two-dimensional (2D) materials on a SiO(2)/Si substrate have been applied and have been proven effective in a wide range of applications, such as circuits, memory, photodetectors, gas sensors, optical modulators, valleytronics, and spintronics. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Several examples are presented which elucidate the structural, optical, and electronic consequences of incorporating these electron-deficient fragments in the conjugated skeletons, particularly relating to applications in organic thin-film transistors.…”
Enlace del recurso
Enlace del recurso

“…We have examined the effects of oxygen content and thickness in sputtered InSnO (ITO) electrodes, especially for the application of imperceptible amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) in humidity sensors. The imperceptible a-IGZO TFT with 50-nm ITO electrodes deposited at Ar:O(2) = 29:0.3 exhibited good electrical performances with V(th) of −0.23 V, SS of 0.34 V/dec, µ(FE) of 7.86 cm(2)/V∙s, on/off ratio of 8.8 × 10(7), and has no degradation for bending stress up to a 3.5-mm curvature. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…A novel concept of drain current modelling in rectangular normal MOS transistors with the Lorentz force has been proposed for the first time. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…A synthesis and basic properties of Parylene C are described, followed by several examples of use of parylenes as substrates, dielectrics, insulators, or protecting materials in the construction of organic field-effect transistors.…”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

Enlace del recurso
Enlace del recurso
Enlace del recurso

“…In this work we report a novel fluorescent three-state switch capable of reproducing the analog response of transistors, an ubiquitous device in modern electronics. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Since the discovery of the two-dimensional (2D) carbon material, graphene, just over a decade ago, the development of graphene-based field effect transistors (G-FETs) has become a widely researched area, particularly for use in point-of-care biomedical applications. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The model integrates the “conventional” model for SB-FETs with the phenomenon of contact gating – an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transistors. The two-path model is validated by a careful comparison with experimental characteristics obtained from a large number of back-gated WSe(2) devices with various channel thicknesses. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Polymer dielectrics in organic field‐effect transistors (OFETs) are essential to provide the devices with overall flexibility, stretchability, and printability and simultaneously introduce charge interaction on the interface with organic semiconductors (OSCs). …”
Enlace del recurso
Enlace del recurso
Enlace del recurso