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Mostrando 721 - 740 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.19s Limitar resultados
  1. 721
    “…Further, high-performance In(2)O(3) thin-film transistors with an Al(2)O(3) gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm(2)/V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10(7). …”
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    Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
  2. 722
    “…We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. …”
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    Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors
  3. 723
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    A soft lithographic approach to fabricate InAs nanowire field-effect transistors
  4. 724
    “…Nitrogen dioxide (NO(2)) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. …”
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    Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors
  5. 725
    “…This process involves coupling a charge-modulated organic field-effect transistor (OCMFET) with a pyro/piezoelectric element, namely a commercial film of poly-vinylene difluoride (PVDF). …”
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    Ultrathin, flexible and multimodal tactile sensors based on organic field-effect transistors
  6. 726
    “…Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO(2) as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm(2)/Vs, while their on/off current ratios are 1.7 × 10(4) and 2.5 × 10(5), respectively. …”
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    Tunability of p- and n-channel TiO(x) thin film transistors
  7. 727
    “…We report an all-polymer micrometer-scale transistor platform for the detection of lactate, a significant metabolite in cellular metabolic pathways associated with critical health care conditions. …”
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    Direct metabolite detection with an n-type accumulation mode organic electrochemical transistor
  8. 728
    “…The improvement of the performance of organic thin-film transistors is driven by novel materials and improved device engineering. …”
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    Non-Linear Self-Heating in Organic Transistors Reaching High Power Densities
  9. 729
    “…Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In(2)O(3) thin film transistors, which results in overall improvement of device performance. …”
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    A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors
  10. 730
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    Impact ionization by hot carriers in a black phosphorus field effect transistor
  11. 731
    “…The wide research and development on oxide thin-film transistors (TFTs) have led to considerable changes in mainstream technology in various electronic applications. …”
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    Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors
  12. 732
    “…This paper proposes a tribotronic bipolar junction transistor (TBJT) that incorporates a bipolar junction transistor and a triboelectric nanogenerator (TENG) in the single-electrode mode. …”
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    Tribotronic bipolar junction transistor for mechanical frequency monitoring and use as touch switch
  13. 733
    “…Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. …”
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    Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
  14. 734
    “…Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. …”
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    Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
  15. 735
    “…Due to ultra-high reactivity, direct determination of free radicals, especially hydroxyl radical (•OH) with ultra-short lifetime, by field-effect transistor (FET) sensors remains a challenge, which hampers evaluating the role that free radical plays in physiological and pathological processes. …”
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    Free radical sensors based on inner-cutting graphene field-effect transistors
  16. 736
    “…In this experiment, the bottom MIS transistors with different passivation time are equivalent to the NC devices with different MOS capacitances. …”
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    Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
  17. 737
    “…As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. …”
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    An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
  18. 738
    “…By designing the device channels along the lower effective mass armchair direction, a record-high drive current up to 1.2 mA/μm at 300 K and 1.6 mA/μm at 20 K can be achieved in a 100-nm back-gated BP transistor, surpassing any two-dimensional semiconductor transistors reported to date. …”
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    High-speed black phosphorus field-effect transistors approaching ballistic limit
  19. 739
    “…A polarization destabilization in ferroelectrics causes an effective negative permittivity, resulting in a differential voltage amplification and a reduced subthreshold swing when integrated into the gate stack of a transistor. The novelty and universality of this approach relate to the fact that the gate stack is not anymore a passive part of the transistor and contributes to signal amplification. …”
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    Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
  20. 740
    “…The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. …”
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    Pinch-Off Formation in Monolayer and Multilayers MoS(2) Field-Effect Transistors
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