Mostrando 761 - 780 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.15s Limitar resultados
  1. 761
  2. 762
    “…Furthermore, devices can be fabricated using various principles, and include piezoelectric, capacitive, piezoresistive, and field-effect transistor types, depending on the parameters to be achieved. …”
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  3. 763
    “…In this framework, our study aims to reveal a new approach to obtain RP of complex devices, namely Organic Electro-Chemical Transistors (OECTs), by SL technique exploiting a resin composite based on the conductive poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and the photo curable Poly(ethylene glycol) diacrylate (PEGDA). …”
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  4. 764
    “…‘Ideal’ transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. …”
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  5. 765
    “…We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes for water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading of a commercial macroporous aminophosphonic acid resin, Puromet(TM) MTS9501, and were filled into a plasticised poly(vinyl chloride) (PVC) phase transfer membrane. …”
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  6. 766
    “…Such a logic‐memory transistor could provide a compact approach to develop next‐generation efficient visual systems.…”
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  7. 767
    “…In this study, we combined an in situ PTS system with a high-sensitivity polysilicon nanowire field-effect transistor (pSNWFET)-based sensor to directly monitor PTS formation. …”
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  8. 768
    “…In an oxide thin-film transistor (TFT), the channel layer is an oxide material in which oxygen reacts with metal to form a thin insulator layer. …”
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  9. 769
    “…We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS(2) transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. …”
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  10. 770
    “…[Image: see text] We report the fabrication and electrical characterization of germanium arsenide (GeAs) field-effect transistors with ultrathin channels. The electrical transport is investigated in the 20–280 K temperature range, revealing that the p-type electrical conductivity and the field-effect mobility are growing functions of temperature. …”
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  11. 771
  12. 772
    por Soldano, Caterina
    Publicado 2021
    “…Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. …”
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  13. 773
    “…Radiating amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) with deep ultraviolet light (λ = 175 nm) is found to induce rigid negative threshold-voltage shift, as well as a subthreshold hump and an increase in subthreshold-voltage slope. …”
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  14. 774
    por Wu, Chi-Chang, Wang, Min-Rong
    Publicado 2021
    “…In this work, a single-crystalline silicon nanobelt field-effect transistor (SiNB FET) device was developed and applied to pH and biomolecule sensing. …”
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  15. 775
    “…The prototype field-effect transistors were fabricated to exhibit high hole mobility up to 1485 cm(2) V(−1) s(−1) at room temperature and 3500 cm(2) V(−1) s(−1) at low temperature (2 K). …”
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  16. 776
    “…Source‐gated transistors (SGTs), which are typically realized by introducing a source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over conventional TFTs, including ultrahigh gain, lower power consumption, higher bias stress stability, immunity to short‐channel effects, and greater tolerance to geometric variations. …”
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  17. 777
    por Oh, Jong Hyeok, Yu, Yun Seop
    Publicado 2021
    “…In this study, we propose an improved macro-model of an N-type feedback field-effect transistor (NFBFET) and compare it with a previous macro-model for circuit simulation. …”
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  18. 778
    “…An air pollution detector is proposed based on a tube-shaped single-electron transistor (SET) sensor. By monitoring the flow control component of the detector, each air pollutant molecule can be placed at the center of a SET nanopore and is treated as an island of the SET device in the same framework. …”
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  19. 779
    “…[Image: see text] Free-standing and flexible field-effect transistors based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene)/polystyrene bilayers are obtained by well-controlled phase separation of both components. …”
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  20. 780
    “…A detailed electrical characterization of the PEDOT:PSS dendrites is conducted through DC and impedance spectroscopy measurements and it is shown how organic electrochemical transistors (OECT) can be realized with these structures. …”
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