Mostrando 881 - 900 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.13s Limitar resultados
  1. 881
    “…On the basis of a minimum consumed energy model with a Strouhal number of approximately 0.3, the scale could be controlled within the range of 1 × 10(4) to 3 × 10(4) μm(2) or even a larger range. Transistors fabricated with one m-CNT-T showed an on/off ratio of 10(3) to 10(6) with 4-mA on-state current, which is also the highest on-state current recorded so far for single CNT–based transistors. …”
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  2. 882
  3. 883
  4. 884
    “…This paper reports a detailed electrical characterization of back-gated multilayer MoS(2) transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. …”
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  5. 885
    por Zong, Xianli, Zhu, Rong
    Publicado 2017
    “…We develop a ZnO nanorod field effect transistor (FET) as an ultrasensitive force sensor to realize long-time, unstained, and in-situ detection of cell cycle phases, including attachment, spread, and mitosis. …”
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  6. 886
    “…Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. …”
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  7. 887
    “…Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. …”
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  8. 888
    por Shih, Cheng Wei, Chin, Albert
    Publicado 2017
    “…High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. …”
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  9. 889
  10. 890
    “…The point-functionalized carbon nanotube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative based on intrinsic molecular charge that offers significantly higher signal levels for detection. …”
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  11. 891
    por Reichert, Thomas, Saragi, Tobat P I
    Publicado 2017
    “…We present magnetoresistive organic field-effect transistors featuring ultrasmall magnetic field-effects as well as a sign reversal. …”
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  12. 892
    “…[Image: see text] Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Si-based inks is generally complex and expensive. …”
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  13. 893
    “…This work is focused on the fabrication and analysis of graphene-based, solution-gated field effect transistor arrays (GFETs) on a large scale for bioelectronic measurements. …”
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  14. 894
    “…Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. …”
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  15. 895
    “…Here, we report on the fabrication of graphene field effect transistors (G-FETs) on various substrates (silicon, sapphire, glass coverslips, and polyimide deposited onto Si/SiO(2) substrates), exhibiting high sensitivity (4 mS/V, close to the Dirac point at V(LG) < V(D)) and low noise level (10(−22) A(2)/Hz, at V(LG) = 0 V). …”
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  16. 896
    “…Here, we report the design and performance of a fluorescent nanoprobe with transistor-like responses (transition pH = 6.9) for the detection of the deregulated pH that drives many of the invasive properties of cancer. …”
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  17. 897
    “…By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. …”
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  18. 898
  19. 899
  20. 900
    “…This study investigates not only the steady state but also the transient photoresponse of graphene field-effect transistor (G-FET) of which gate bias is applied through the Schottky barrier formed at an n-type Si/graphene interface with a thin oxide layer, where the oxide thickness is sufficiently thin for tunneling of the charge carrier. …”
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