Mostrando 1,001 - 1,020 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.18s Limitar resultados
  1. 1001
  2. 1002
    “…In the crystalline phase, DBOZ2 exhibits two-dimensional brick wall packing with a high degree of intermolecular electronic coupling, leading to a record-breaking hole mobility of 3.5 cm(2) V(−1) s(−1) for singlet diradical transistors, while retaining good device stability in the ambient air.…”
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  3. 1003
    “…[Image: see text] We demonstrate the key role of charge-transfer complexes in surface doping as a successful methodology for improving channel field-effect mobility and reducing the threshold voltage in organic field-effect transistors (OFETs), as well as raising the film conductivity. …”
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  4. 1004
    “…Organic field‐effect transistors (OFETs) have been prepared, showing balanced hole and electron mobilities of the order of 10(−3) cm(2) V(−1) s(−1) or ambipolar charge transport which is first inferred from their redox amphoterism. …”
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  5. 1005
    “…The thickness reduction leads to substantially improved gate tunability of field-effect transistors with an enhanced current switching ratio of ∼10(3), promoting the applications of Te in future logic electronics. …”
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  6. 1006
    “…Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility. …”
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  7. 1007
    “…Oxide thin-film transistors (TFTs) are of increasing interest in the field of advanced displays. …”
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  8. 1008
    “…This research presents a comparative analysis of water-gated thin film transistors based on a copper oxide (CuO) semiconductor in the form of a smooth film and a nanostructured surface. …”
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  9. 1009
    “…These improvements were then applied to the fabrication of completely printed carbon nanotube (CNT)-based thin-film transistors (TFT) to reduce the gate threshold voltage (V(th)) and hysteresis in V(th) during device operation. …”
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  10. 1010
    “…In this study, an active and fully transparent ECoG array based on zinc oxide thin‐film transistors (ZnO TFTs) is developed as a local neural signal amplifier for electrophysiological monitoring. …”
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  11. 1011
    “…Ultrathin (<5 µm) organic electrochemical transistors (OECTs) can be potentially used as a highly efficient bioelectronic transducer because they demonstrate high transconductance during low‐voltage operation and close conformability to biological tissues. …”
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  12. 1012
    “…NMC532- and LNMO-based cathode materials were used as the transistor channel materials and LP30 as the ion gating medium. …”
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  13. 1013
    “…In this paper, we proposed a simple “mixed-catalyzer layer” modified silicon nanowire field-effect transistor biosensor that enabled direct detection of glucose with low-charge in high ionic strength solutions. …”
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  14. 1014
    por Meng, Yanfang
    Publicado 2023
    “…To satisfy the practical demands of high energy efficiency, in this report, combining the advantage of multiparameter monitoring, high sensitivity, and high resolution of active matrix field-effect transistor (FET) with triboelectric nanogenerators (TENG), we successfully developed the tribotronic mechanosensation active matrix based on tribotronic ion gel graphene scrolls field-effect transistors (GSFET). …”
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  15. 1015
  16. 1016
    por Karmakar, Supriya
    Publicado 2014
    “…The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). …”
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  17. 1017
  18. 1018
  19. 1019
  20. 1020
    “…Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation.…”
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