“…We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. …”
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“…Radio-frequency application of graphene transistors is attracting much recent attention due to the high carrier mobility of graphene. …”
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“…We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. …”
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“…Here we show experimentally that single-crystal nanowires of the topological insulator Bi(2)Se(3) can be used as the conduction channel in high-performance field effect transistor (FET), a basic circuit building block. Its current-voltage characteristics are superior to many of those reported for semiconductor nanowire transistors, including sharp turn-on, nearly zero cutoff current, very large On/Off current ratio, and well-saturated output current. …”
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“…Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. …”
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“…High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. …”
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“…A high-mobility (approximately 32.3 cm(2)/Vs) ZTO/IZO transistor with excellent photo-bias stability was obtained from Sn doping of the front IZO layer. …”
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“…A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field effect transistors (FETs). A strong photoresponse was observed in both unipolar MoS(2) and ambipolar WSe(2) FETs (i) at the high drain voltage due to a high electric field along the channel for separating photo-excited charge carriers and (ii) at the certain gate voltage due to the optimized barriers for the collection of photo-excited charge carriers at metal contacts. …”
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“…A new atropine drug-FET sensor, which was made of an ISFET (ion sensitive field effect transistor) and a drug sensitive membrane prepared by adding electric active matter to a β-cyclodextrin solution, was developed. …”
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“…The transistors exhibit an on/off current ratio of up to 1.9 × 10(5), and a maximum transconductance of up to 27 μS (5.4 μS/μm). …”
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“…Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi(0.04)Sb(0.96))(2)Te(3) thin films grown by molecular beam epitaxy on SrTiO(3)(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). …”
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“…And the measurements' influences of porous structures in LHP on heat removal from the insulated gate bipolar transistor (IGBT) have been made.…”
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“…Furthermore, changes in charged lipid membrane properties can be electrically detected by a graphene-based electrolyte-gated graphene field effect transistor (GFET). In this paper, a monolayer graphene-based GFET with a focus on the conductance variation caused by membrane electric charges and thickness is studied. …”
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“…[Image: see text] We report on the reversible detection of CaptAvidin, a tyrosine modified avidin, with single-walled carbon nanotube (SWNT) field-effect transistors (FETs) noncovalently functionalized with biotin moieties using 1-pyrenebutyric acid as a linker. …”
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“…The influence of UV/ozone treatment on the property of polystyrene (PS) dielectric surface was investigated, and pentacene organic field-effect transistors (OFETs) based on the treated dielectric was fabricated. …”
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“…This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. …”
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“…Here, highly sensitive glucose sensors are successfully realized based on whole-graphene solution-gated transistors with the graphene gate electrodes modified with an enzyme glucose oxidase. …”
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“…[Image: see text] Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. …”
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“…Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. …”
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