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  1. 1081
    por Yu, Yang-Yen, Jiang, Ai-Hua, Lee, Wen-Ya
    Publicado 2016
    “…Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO(3)/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. …”
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    Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications
  2. 1082
    “…A system composed of ion-sensitive field-effect transistors (ISFET), cells, and program-controlled fluidics has enabled the acquisition of real-time information about the integrity of the cell membrane via pH measurement. …”
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    Oleyl group-functionalized insulating gate transistors for measuring extracellular pH of floating cells
  3. 1083
    “…We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.…”
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    Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
  4. 1084
    “…[Image: see text] The channel width-to-length ratio is an important transistor parameter for integrated circuit design. …”
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    Nondestructive Method for Mapping Metal Contact Diffusion in In(2)O(3) Thin-Film Transistors
  5. 1085
    “…Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. …”
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    Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors
  6. 1086
    “…We report on the mechanical fatigue behavior of printed, organic, thin-film transistors (OTFTs) based on a polymer semiconductor, investigated by repeatedly applying strain to the flexible OTFT devices and assessing their electrical characteristics after 60,000 bending cycles. …”
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    Mechanical Fatigue Behavior of Flexible Printed Organic Thin-Film Transistors under Applied Strain
  7. 1087
    “…Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. …”
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    Low on-resistance diamond field effect transistor with high-k ZrO(2) as dielectric
  8. 1088
    “…In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200( )°C. …”
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    High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor
  9. 1089
    “…Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. …”
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    Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording
  10. 1090
    “…A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlO(x) films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. …”
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    Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
  11. 1091
    “…We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. …”
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    Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors
  12. 1092
    “…We investigate how exposure to the environment affects the electrical properties of CVD-grown monolayer MoS(2) by monitoring electrical parameters of MoS(2) field-effect transistors as their environment is changed from atmosphere to high vacuum. …”
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    Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors
  13. 1093
    “…We investigated the electrical stabilities of two types of pentacene-based organic thin-film transistors (OTFTs) with two different polymeric dielectrics: polystyrene (PS) and poly(4-vinyl phenol) (PVP), in terms of the interfacial charge depletion. …”
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    Effects of Interfacial Charge Depletion in Organic Thin-Film Transistors with Polymeric Dielectrics on Electrical Stability
  14. 1094
    “…We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. …”
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    Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
  15. 1095
    “…Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. …”
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    Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride
  16. 1096
    “…Here, we show that square superlattices of PbSe nanocrystals can be incorporated as a nanocrystal monolayer in a transistor setup with an electrolyte gate. The electron (and hole) density can be controlled by the gate potential, up to 8 electrons per nanocrystal site. …”
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    Transport Properties of a Two-Dimensional PbSe Square Superstructure in an Electrolyte-Gated Transistor
  17. 1097
    “…Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. …”
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    Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
  18. 1098
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    Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS(2) transistor
  19. 1099
    “…This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. …”
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    Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact
  20. 1100
    “…Biosensors employing single-walled carbon nanotube field-effect transistors (SWCNT FETs) offer ultimate sensitivity. …”
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    Peptide aptamer-modified single-walled carbon nanotube-based transistors for high-performance biosensors
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