Mostrando 1,101 - 1,120 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.17s Limitar resultados
  1. 1101
    “…Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. …”
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  2. 1102
    “…Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. …”
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  3. 1103
    “…In this paper, a coupling p+n field effect transistor (FET) amplification circuit is designed to detect methane gas. …”
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  4. 1104
    “…Diketopyrrolopyrrole-based copolymers with different contents and substitution patterns of the PDMS side chains were synthesized and evaluated for application in organic field-effect transistors. The PDMS side chains greatly increased the solubility of the polymers and led to shorter d-spacings of the π-stacking in the thin films compared with polymers containing conventional branched alkyl side chains.…”
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  5. 1105
    “…The optical band gap of the polymers is shown to systematically decrease as the size of the heteroatom is increased, mainly as a result of a stabilization of the LUMO energy, resulting in a small band gap of 1.4 eV for P3TeV. Field effect transistors measurements in variety of architectures demonstrate that the selenophene polymer exhibits the highest mobility, highlighting that increasing the size of the heteroatom is not always beneficial for charge transport.…”
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  6. 1106
    “…In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were analyzed. …”
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  7. 1107
    “…Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. …”
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  8. 1108
    “…The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. …”
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  9. 1109
  10. 1110
    “…A new interlocking p+n field-effect transistor (FET) circuit has been proposed for Mn-doped ZnO nanoparticles (MZO) to detect the acetone gas at low concentration, especially close to 1.8 ppm. …”
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  11. 1111
    por Chu, Dongil, Pak, Sang Woo, Kim, Eun Kyu
    Publicado 2018
    “…In this work, the hBN coupled SnS(2) thin film transistors are demonstrated with bottom-gated device configuration. …”
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  12. 1112
  13. 1113
    “…With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that can operate in the high-frequency millimeter-wave band. …”
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  14. 1114
    “…A two-dimensional (2D) magnetic field sensor consisting of four silicon magnetic sensitive transistors (SMSTs) with similar characteristics is presented in this paper. …”
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  15. 1115
    “…Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify m(J) = ±1/2 and m(J) = ±3/2 levels, and we use a magnetic field to overcome the initial heavy-light hole splitting and to tune the J = 3/2 energy spectrum. …”
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  16. 1116
    “…The electron mobility in field-effect transistors of PbS CQDs treated with different halides shows an increase with the size of the atomic ligand (from 3.9 × 10(–4) cm(2)/(V s) for fluoride-treated to 2.1 × 10(–2) cm(2)/(V s) for iodide-treated), whereas the hole mobility remains unchanged in the range between 1 × 10(–5) cm(2)/(V s) and 10(–4)cm(2)/(V s). …”
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  17. 1117
    “…SnSe(2) field-effect transistor was fabricated based on exfoliated few-layered SnSe(2) flake, and its electrical and photoelectric properties have been investigated in detail. …”
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  18. 1118
    “…A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. …”
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  19. 1119
    por Perinot, Andrea, Caironi, Mario
    Publicado 2018
    “…Here, it is demonstrated that high‐frequency, low‐voltage, polymer field‐effect transistors can be fabricated on plastic with the sole use of a combination of scalable printing and digital laser‐based techniques. …”
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  20. 1120
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