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  1. 1121
    por Gu, Hwa Young, Kim, Sangwan
    Publicado 2019
    “…Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. …”
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    Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)
  2. 1122
    “…Organic field-effect transistors (OFETs) have potential applications, specifically in flexible and low-cost electronics such as portable and wearable technologies. …”
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    New Approaches in Flexible Organic Field-Effect Transistors (FETs) Using InClPc
  3. 1123
    por Li, Fang, Wang, Zhongrong, Jia, Yunfang
    Publicado 2019
    “…Aptamer functionalized graphene field effect transistor (apta-GFET) is a versatile bio-sensing platform. …”
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    Reduced Carboxylate Graphene Oxide based Field Effect Transistor as Pb(2+) Aptamer Sensor
  4. 1124
    “…[Image: see text] The modulation of threshold voltage (V(TH)) of organic thin-film transistors (OTFTs) was investigated by embedding a thin CuO layer between the two semiconductor layers. …”
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    Mechanistic Analysis of Embedded Copper Oxide in Organic Thin-Film Transistors with Controllable Threshold Voltage
  5. 1125
    “…[Image: see text] In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. …”
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    Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study
  6. 1126
    “…In view of this problem, a horizontal-gate monolayer MoS(2) transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 10(4) have been obtained. …”
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    A Horizontal-Gate Monolayer MoS(2) Transistor Based on Image Force Barrier Reduction
  7. 1127
    “…We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). …”
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    Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures
  8. 1128
    “…In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. …”
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    Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure
  9. 1129
    “…Flexible organic ferroelectric field-effect transistors (Fe-FETs) have attracted attention for next-generation memory applications. …”
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    Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect Transistors
  10. 1130
    “…In this work, we show several device configurations in which the lateral conduction between a drain-source channel (synaptic weight) is effectively controlled by active gate-tunable volume resistance changes, thus providing the basis for the design of robust and flexible transistor-based artificial synapses.…”
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    Multi-Terminal Transistor-Like Devices Based on Strongly Correlated Metallic Oxides for Neuromorphic Applications
  11. 1131
    “…The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. …”
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    Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability
  12. 1132
    “…The organic thin-film transistor (OTFT) device with the microwave-synthesized CP displayed better hole mobility (0.137 cm(2) V(–1) s(–1)) as compared to that with the thermally synthesized CP. …”
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    High-Performance Ambient-Condition-Processed Polymer Solar Cells and Organic Thin-Film Transistors
  13. 1133
    por Zhang, Yannan, Han, Ke, Li, Jiawei
    Publicado 2020
    “…Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. …”
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    A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator
  14. 1134
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    Author Correction: Organic Power Electronics: Transistor Operation in the kA/cm(2) Regime
  15. 1135
    “…Electrical and carrier transport properties in In–Ga–Zn–O thin-film transistors (IGZO TFTs) with a heterojunction channel were investigated. …”
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    Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
  16. 1136
    “…To enhance the application potential of synthetic sensing materials, organic field‐effect transistors (OFETs) are some of the suitable platforms for protein assays because of their solution processability, durability, and compact integration. …”
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    Protein Assays on Organic Electronics: Rational Device and Material Designs for Organic Transistor‐Based Sensors
  17. 1137
    “…Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. …”
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    Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
  18. 1138
    “…A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. …”
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    Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors
  19. 1139
    “…The resulting field-effect transistor-type biosensor was utilized to evaluate various cortisol concentrations. …”
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    Ultrasensitive Stress Biomarker Detection Using Polypyrrole Nanotube Coupled to a Field-Effect Transistor
  20. 1140
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    ZrO(2) Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
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