Mostrando 1,161 - 1,180 Resultados de 5,078 Para Buscar '"transistor"', tiempo de consulta: 0.23s Limitar resultados
  1. 1161
    “…[Image: see text] Electrolyte gated organic transistors can operate as powerful ultrasensitive biosensors, and efforts are currently devoted to devising strategies for reducing the contribution of hardly avoidable, nonspecific interactions to their response, to ultimately harness selectivity in the detection process. …”
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  2. 1162
    “…A gold nanoparticle (AuNP)-decorated graphene field-effect transistor (G-FET) sensor was fabricated, after which complementary phosphorodiamidate morpholino oligos (PMO) probe was immobilized on the AuNP surface. …”
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  3. 1163
  4. 1164
    “…Here, by adopting a poly(3,4-ethylenedioxythiophene):tosylate/Polytetrahydrofuran composite as the active channel, we present a non-volatile organic electrochemical transistor that shows a write bias less than 0.8 V and retention time longer than 200 min without decoupling the write and read operations. …”
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  5. 1165
    “…The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1–8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and I(on)/I(off) ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. …”
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  6. 1166
    “…High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh rate and high-resolution panel display technology. …”
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  7. 1167
  8. 1168
    “…Although large-area and low-cost fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved via solution processing, the electrical performance of the solution-based s-SWCNT FETs is often limited by the charge transport in the s-SWCNT networks and interface between the s-SWCNT and the dielectrics depending on both s-SWCNT solution synthesis and device architecture. …”
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  9. 1169
    “…Although various methods have been performed to improve the high-frequency characteristics of MoS(2) RF transistors, the impact of the back-gate bias on dual-gate MoS(2) RF transistors is still unexplored. …”
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  10. 1170
    “…Cointegration of multistate single-transistor neurons and synapses was demonstrated for highly scalable neuromorphic hardware, using nanoscale complementary metal-oxide semiconductor (CMOS) fabrication. …”
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  11. 1171
    “…Two new glycolated semiconducting polymers PgBT(F)2gT and PgBT(F)2gTT of differing backbone curvatures were designed and synthesised for application as p‐type accumulation mode organic electrochemical transistor (OECT) materials. Both polymers demonstrated stable and reversible oxidation, accessible within the aqueous electrochemical window, to generate polaronic charge carriers. …”
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  12. 1172
    “…Furthermore, since both the memory and computing units are based on two-surface-channel transistors with high area efficiency, the two proposed computing-in-memory SRAM cells consume fewer transistors, suggesting a potential application in highly area-efficient and multifunctional computing chips.…”
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  13. 1173
  14. 1174
    “…In this paper, we present a novel electrolyte-gated graphene field-effect transistor (EGFET) biosensor consisting of acoustic tweezers to increase the sensitivity. …”
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  15. 1175
    “…Solution-gated graphene field-effect transistors (SG-GFETs) provide an ideal platform for sensing biomolecules owing to their high electron/hole mobilities and 2D nature. …”
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  16. 1176
    “…The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO(2)) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this study, the more positive threshold voltage shift (∆V(TH)) and reduced I(ON) were observed when increasing the oxygen ratio during a-IWO deposition. …”
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  17. 1177
    “…Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. …”
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  18. 1178
    “…The past few decades have seen an uptick in the scope and range of device applications of organic semiconductors, such as organic field-effect transistors, organic photovoltaics and light-emitting diodes. …”
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  19. 1179
    “…Organic light emitting transistors (OLETs) combine, in the same device, the function of an electrical switch with the capability of generating light under appropriate bias conditions. …”
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  20. 1180
    “…This paper describes the non-contact optical detection of debris material that adheres to the substrates of color filters (CFs) and thin-film transistors (TFTs) by area charge-coupled devices (CCDs) and laser sensors. …”
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