“…In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. …”
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“…A low-voltage and low-power true single-phase flip-flop that minimum the total transistor count by using the pass transistor logic circuit scheme is proposed in this paper. …”
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“…Here, an O(2)‐ultrasensitive MoTe(2) material and an O(2)‐insensitive SnS(2) material are integrated to form a vdW heterostructure, allowing the realization of charge‐polarity control for multioperation‐mode transistors through a simple and effective rapid thermal annealing strategy under dry‐air and vacuum conditions. …”
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“…Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. …”
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“…As a result, MoS(2) field effect transistors with back-gate configuration and ohmic contacts have been successfully fabricated. …”
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“…It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get optimal maximum oscillation frequency (f(max)). …”
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“…Here, we report the design of water electricity generators featuring the combination of lubricant layer and transistor-like electrode architecture that endows enhanced electrical performances in different working environments. …”
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“…In this study, single-layer MoS(2) field-effect transistors (FETs) with Au/Ti–graphene heteroelectrodes were fabricated to examine the effect of the electrodes on the electrical properties of the MoS(2) FETs. …”
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“…Surface charge transfer doping (SCTD) using oxygen plasma to form a p‐type dopant oxide layer on transition metal dichalcogenide (TMDs) is a promising doping technique for 2D TMDs field‐effect transistors (FETs). However, patternability of SCTD is a key challenge to effectively switch FETs. …”
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“…In this article, we first provide a comprehensive review on the material properties, crystal growth, and deposition methods of β-Ga(2)O(3), and then focus on the state-of-the-art depletion mode, enhancement mode, and nanomembrane field-effect transistors (FETs) based on β-Ga(2)O(3) for high-power switching and high-frequency amplification applications. …”
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“…Here, we propose the CMOS compatible gate injection-based field-effect transistor employing thermionic emission to enhance the linear conductance update. …”
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“…Solution-grown indium oxide (In(2)O(3)) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In(2)O(3) TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. …”
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“…Reconfigurable field effect transistors are an emerging class of electronic devices, which exploit a structure with multiple independent gates to selectively adjust the charge carrier transport. …”
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“…[Image: see text] Organic light-emitting transistors are photonic devices combining the function of an electrical switch with the capability of generating light under appropriate bias conditions. …”
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“…Here, we demonstrate the air-free fabrication of microscale field-effect transistors (μ-FETs) with channels consisting of single PbSe QD epi-SL grains (2–7 μm channel dimensions) and analyze charge transport in these single-grain devices. …”
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“…Flexible radio frequency (RF) transistors play an important role in the fast-growing wearable smart sensors for data communication. …”
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“…Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. …”
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“…Through experimental and theoretical verification, the tiny difference in molecular conformation leads to crystalline polymorphisms and dramatically distinct charge transport properties, based on which a high‐performance organic phase‐change memory transistor (OPCMT) is constructed. The OPCMT exhibits a quick programming/erasing rate (about 3 s), long retention time (more than 2 h), and large memory window (i.e., large threshold voltage shift over 30 V). …”
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“…The proposed device is based on a flexible organic electrochemical transistor gated by the potential generated by the interaction of gas molecules with ions in a chemoreceptive ionogel. …”
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“…With the rapid miniaturization of integrated chips in recent decades, aggressive geometric scaling of transistor dimensions to nanometric scales has become imperative. …”
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