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  1. 1281
    “…The donor-acceptor (D-A)-type diketopyrrolopyrrole (DPP)-based small molecules (LGC-D117 and LGC-D118) were synthesized and used as the active layer of solution-processable organic field-effect transistors (OFETs). Both LGC-D117 and LGC-D118 contain silaindacenodithiophene as electron-donor units with DPP as an electron-accepting linker, and octylrhodanine as the electron-accepting end group. …”
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    High Performance Solution Processed Organic Field Effect Transistors with Novel Diketopyrrolopyrrole-Containing Small Molecules
  2. 1282
    “…Electrical transport of multi-layer SnSe nanoflakes, which were prepared by exfoliation from bulk single crystals, was conducted using back-gated field-effect transistor (FET) structures with Au and Ti contacts on SiO(2)/Si substrates, revealing that multi-layer SnSe nanoflakes exhibit p-type semiconductor characteristics owing to the Sn vacancies on the surfaces of SnSe nanoflakes. …”
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    Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts
  3. 1283
    “…Detection of tumor markers is important for cancer diagnosis. Field-effect transistors (FETs) are a promising method for the label-free detection of trace amounts of biomolecules. …”
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    Field Effect Transistor Biosensor Using Antigen Binding Fragment for Detecting Tumor Marker in Human Serum
  4. 1284
    “…The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm(2)/(V∙s) and a threshold voltage of 12.2 V. …”
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    High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors
  5. 1285
    “…In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. …”
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    Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
  6. 1286
    “…We present a complete biosensing system that comprises a Thin Film Transistor (TFT)-based nanoribbon biosensor and a low noise, high-performance bioinstrumentation platform, capable of detecting sub-30 mpH unit changes, validated by an enzymatic biochemical reaction. …”
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    A Sub-30 mpH Resolution Thin Film Transistor-Based Nanoribbon Biosensing Platform
  7. 1287
    “…Surprisingly, the “perfect” structurally regular polymers showed poor molecular ordering in thin films and very low charge transport performance as channel semiconductors in organic thin film transistors (OTFTs). On the contrary, all the “defected” polymers exhibited much improved molecular ordering and significantly higher charge carrier mobility.…”
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    Is a polymer semiconductor having a “perfect” regular structure desirable for organic thin film transistors?
  8. 1288
    por Ko, Eunah, Shin, Jaemin, Shin, Changhwan
    Publicado 2018
    “…Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. …”
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    Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
  9. 1289
    “…Bottom-gate bottom-contact organic thin film transistors (OTFTs) were prepared with four novel star-shaped conjugated molecules containing a fused thieno[3,2-b]thiophene moiety incorporated either in the core and/or at the periphery of the molecular framework. …”
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    Organic Thin Film Transistors Incorporating Solution Processable Thieno[3,2-b]thiophene Thienoacenes
  10. 1290
    por Liu, Jiangwei, Koide, Yasuo
    Publicado 2018
    “…Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond) for metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. …”
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    An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors
  11. 1291
    “…By connecting the PBA–LD-coated Au electrode to a field-effect transistor (FET), the molecular charge changes at the biointerface of the Au electrode, which was caused by di-ester binding of the PBA–CA complex, were transduced into gate surface potential changes. …”
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    Catecholamine Detection Using a Functionalized Poly(l-dopa)-Coated Gate Field-Effect Transistor
  12. 1292
    “…Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. …”
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    Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
  13. 1293
    “…Organic field-effect transistors fabricated with cellulose nanopaper dielectrics exhibit good transistor performances under operation voltage below 2 V, and no discernible drain current change is observed when the device is under bending with radius down to 1 mm. …”
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    Intrinsically ionic conductive cellulose nanopapers applied as all solid dielectrics for low voltage organic transistors
  14. 1294
    “…An ambipolar channel layer material is required to realize the potential benefits of ambipolar complementary metal–oxide–semiconductor field‐effect transistors, namely their compact and efficient nature, reduced reverse power dissipation, and possible applicability to highly integrated circuits. …”
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    FeIn(2)S(4) Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field‐Effect Transistors
  15. 1295
    “…For the first time, compounds with lanthanum from the main family element Boron (LaB(x)) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaB(x) thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. …”
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    Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron
  16. 1296
    “…[Image: see text] The application of light-emitting field-effect transistors (LEFET) is an elegant way of combining electrical switching and light emission in a single device architecture instead of two. …”
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    Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating
  17. 1297
    “…A reliable and highly sensitive hydrogen peroxide (H(2)O(2)) field effect transistor (FET) sensor is reported, which was constructed by using molybdenum disulfide (MoS(2))/reduced graphene oxide (RGO). …”
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    Sensitive Molybdenum Disulfide Based Field Effect Transistor Sensor for Real-time Monitoring of Hydrogen Peroxide
  18. 1298
    “…The contact resistance in organic thin-film transistors (TFTs) is the limiting factor in the development of high-frequency organic TFTs. …”
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    Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors
  19. 1299
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    Synthesis of the extended phenacene molecules, [10]phenacene and [11]phenacene, and their performance in a field-effect transistor
  20. 1300
    “…Fabrication of hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with AlO(x) dielectric layer has been successfully carried out. …”
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    Hydrogen-terminated diamond field-effect transistor with AlO(x) dielectric layer formed by autoxidation
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