“…In conjunction with photoinduced switching at low biases, these results afford a chemically-gateable, fully-reversible, two-mode, single-molecule transistor, offering a fresh perspective for creating future multifunctional single-molecule optoelectronic devices in a practical way.…”
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“…In this study, InAlN was grown on glass substrates using pulsed sputtering deposition (PSD) at room temperature (RT) and was applied to thin-film transistors (TFTs). The surface flatness of the InAIN films was improved by reducing the growth temperature from 350 °C to RT. …”
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“…Single-layer ambipolar organic field-effect transistors enable the investigation of different mechanisms in hole and electron transport in a single device since the device architecture provides a controllable planar pn-junction within the transistor channel. …”
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“…We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O(2), N(2), and air. …”
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“…This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. …”
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“…This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e., 220–640 nm) fabricated on the same wafer substrate to prove the feasibility of employing the vertical 3D architecture concept towards massively parallel electronic integration, particularly for logic circuitry and metrological applications. …”
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“…It is seldom utilized as a gate dielectric in solution-processed organic field effect transistors (OFETs). In this work, we demonstrate a simple method, extended ultraviolet–ozone (UVO) treatment, to modify the PDMS surface and effectively employ it in solution-processed OFETs as a gate dielectric material. …”
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“…[Image: see text] We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. …”
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“…We investigated the electrical and optoelectronic characteristics of ambipolar WSe(2) field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. …”
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“…[Image: see text] Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. …”
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“…The organic field‐effect transistors developed by these hybrid C(10)‐DNTT films exhibit improved carrier mobility of 14.7 cm(2) V(−1) s(−1) as compared with 7.3 cm(2) V(−1) s(−1) achieved by pure thermal evaporation (100% improvement) and 2.8 cm(2) V(−1) s(−1) achieved by solution sheared monolayer C(10)‐DNTT. …”
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“…Here, we report electronic properties of field effect transistor devices using monolayer MoS(2) channels and permalloy (Py) as ferromagnetic (FM) metal contacts. …”
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“…In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. …”
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“…Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)-based organic electrochemical transistors (OECTs) are widely utilized to construct highly sensitive biosensors. …”
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“…Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. …”
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“…Here, a light‐driven junction field‐effect transistor (LJFET), consisting of an n‐type ZnO belt as the channel material and a p‐type WSe(2) nanosheet as a photoactive gate material, to break the G–t tradeoff through decoupling the gain from carrier lifetime is reported. …”
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“…The radiation effects on a multi-nanosheet tunneling-based field effect transistor (NS-TFET) were investigated for a 3-nm technology node using a three-dimensional (3D) technology computer-aided design (TCAD) simulator. …”
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“…In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. …”
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“…Here, for selective detection of Cu(2+) ions with high sensitivity, thiacalix[4]arene (TCA) immobilized on graphene field-effect transistors (G-FETs) are developed. Our proposed TCA-immobilized G-FETs are successfully used to detect Cu(2+) ions at concentrations ranging from 1 μM to 1 mM via changes in their transfer characteristics. …”
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“…Si doping was used to significantly improve the bias stability of ZnON thin-film transistors. Si 3 W (~1%) doped ZnON TFTs showed a saturation mobility of 19.70 cm(2)/Vs along with remarkable improvements in the threshold voltage shift for negative gate bias stress (NBS) within 1.69 V. …”
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