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  1. 1341
    por Petrzela, Jiri
    Publicado 2021
    “…The key property of the analyzed structure is its bias point since the transistor is modeled via two-port admittance parameters. …”
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    Evidence of Strange Attractors in Class C Amplifier with Single Bipolar Transistor: Polynomial and Piecewise-Linear Case
  2. 1342
    por Lee, Hyeonji, Hong, Seongin, Yoo, Hocheon
    Publicado 2021
    “…The hole current of the Cytop–WSe(2) field-effect transistor (FET) was boosted by the C–F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. …”
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    Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors
  3. 1343
    “…However, there are fewer systematical studies of chemical vapor deposition (CVD) bilayer MoS(2) radiofrequency (RF) transistors on flexible polyimide substrates. In this work, CVD bilayer MoS(2) RF transistors on flexible substrates with different gate lengths and gigahertz flexible frequency mixers were constructed and systematically studied. …”
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    High-Performance CVD Bilayer MoS(2) Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics
  4. 1344
    “…Here, nanofiber channels with a self‐formed ion‐blocking layer are fabricated to create organic electrochemical transistors (OECTs) that can be tailored to achieve low‐power neuromorphic computing and fast‐response sensing by transferring different amounts of electrospun nanofibers to each device. …”
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    Nanofiber Channel Organic Electrochemical Transistors for Low‐Power Neuromorphic Computing and Wide‐Bandwidth Sensing Platforms
  5. 1345
    “…In this work, a graphene field-effect transistor (G-FET) was employed to detect the volatile molecule-indole based on a π-π stacking interaction between the indole and the graphene. …”
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    Detection of Bacterial Metabolic Volatile Indole Using a Graphene-Based Field-Effect Transistor Biosensor
  6. 1346
    “…Thin films of the organic semiconductor Ph-BTBT-10 and blends of this material with polystyrene have been deposited by a solution shearing technique at low (1 mm s(−1)) and high (10 mm s(−1)) coating velocities and implemented in organic field-effect transistors. Combined X-ray diffraction and electrical characterisation studies prove that the films coated at low speed are significantly anisotropic. …”
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    Mobility anisotropy in the herringbone structure of asymmetric Ph-BTBT-10 in solution sheared thin film transistors
  7. 1347
    “…Enhanced crystal growth with rising temperatures leads to a better transistor performance reaching its maximum at 90 °C with a hole and electron mobility of 1.6 × 10(–3) and 2.3 × 10(–5) cm(2) V(–1) s(–1), respectively. …”
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    Thin Film Growth of a Charge Transfer Cocrystal (DCS/TFPA) for Ambipolar Thin Film Transistors
  8. 1348
    “…These results demonstrate the potential of exploiting SIS into carbohydrate-based polymers for nanofabrication and high pattern density applications, such as transistor devices.…”
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    Poly(styrene)-block-Maltoheptaose Films for Sub-10 nm Pattern Transfer: Implications for Transistor Fabrication
  9. 1349
    “…Here, we report an ultrafast, low-cost, label-free, and portable SARS-CoV-2 immunoglobulin G (IgG) detection platform based on organic electrochemical transistors (OECTs), which can be remotely controlled by a mobile phone. …”
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    Ultrafast, sensitive, and portable detection of COVID-19 IgG using flexible organic electrochemical transistors
  10. 1350
    “…In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. …”
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    Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
  11. 1351
    “…Carbon nanotube field effect transistor (CNT FET) aptasensors have been investigated for the detection of adenosine using two different aptamer sequences, a 35-mer and a 27-mer. …”
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    Comparison of Duplex and Quadruplex Folding Structure Adenosine Aptamers for Carbon Nanotube Field Effect Transistor Aptasensors
  12. 1352
    “…We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. …”
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    Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method
  13. 1353
    por Kim, Sang-Kon
    Publicado 2021
    “…For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. …”
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    Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study
  14. 1354
    “…Owing to the same image processing power, the consumption of transistors in our image processing unit is less than 16% of traditional circuits.…”
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    An application-specific image processing array based on WSe(2) transistors with electrically switchable logic functions
  15. 1355
    “…We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO(2)/5 nm Ge-HfO(2) intermediate layer/8 nm tunnel HfO(2)/p-Si substrate. …”
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    Graphene/Ferroelectric (Ge-Doped HfO(2)) Adaptable Transistors Acting as Reconfigurable Logic Gates
  16. 1356
    “…We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO(2) dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (V(G)) pulses. …”
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    Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO(2) Film
  17. 1357
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    Author Correction: Evolution and universality of two-stage Kondo effect in single manganese phthalocyanine molecule transistors
  18. 1358
    “…A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. …”
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    Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures
  19. 1359
    “…Here, we present hydrogel-based organic electrochemical transistors (OECTs) made with the conducting polymer poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) as wearable and real-time oxygen gas sensors. …”
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    Oxygen Gas Sensing Using a Hydrogel-Based Organic Electrochemical Transistor for Work Safety Applications
  20. 1360
    “…In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). …”
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    Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor
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