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  1. 1361
    “…Herein, we report a facile, low-cost green synthesis and characterization of ZnO NPs along with the demonstration of their usage as an active media in organic field-effect transistor (OFET) devices for sensing carbon monoxide (CO) gas. …”
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  2. 1362
    “…We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO(2) film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO(2) was optimized by varying the number of intense pulses and applied voltage. …”
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  3. 1363
    “…We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In–Ga–Zn–O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage (V(TH)) shift of −6.2 V after 100 Gy X-ray irradiation. …”
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  4. 1364
    “…We have investigated a series of non-conjugated polyelectrolytes (NPEs) which are based on a polyethylenimine (PEI) backbone with various counterions, such as Br(−) I(−) and BIm(4)(−), as interfacial layers at the electrodes of solar cells and transistor devices to improve the power conversion efficiency (PCE) and device performance. …”
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  5. 1365
    “…Metal phthalocyanines (MPcs) are a widely studied class of materials that are frequently used in organic thin-film transistors (OTFTs), organic photovoltaics (OPVs) and organic light emitting diodes (OLEDs). …”
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  6. 1366
    “…To provide a unique opportunity for on‐chip scaled bioelectronics, a symmetrically gated metal‐oxide electric double layer transistor (EDLT) with ion‐gel (IG) gate dielectric and simple in‐plane Corbino electrode architecture is proposed. …”
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  7. 1367
    por Zhang, Lishu, Li, Yifan, Li, Tao, Li, Hui
    Publicado 2018
    “…The conductance of PbSi nanowire transistors shows ballistic and symmetrical features because of the Schottky contact and the resonance transmission peak, which is gate-controlled. …”
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  8. 1368
    “…Despite their huge impact on future electronics, two-dimensional (2D) dichalcogenide semiconductor (TMD) based transistors suffer from the hysteretic characteristics induced by the defect traps located at the dielectric/TMD channel interface. …”
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  9. 1369
    “…Employing these polymers as channel materials in organic electrochemical transistors (OECTs) affords state-of-the-art n-type performance with p(g(7)NC(10)N) recording an OECT electron mobility of 1.20 × 10(–2) cm(2) V(–1) s(–1) and a μC* figure of merit of 1.83 F cm(–1) V(–1) s(–1). …”
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  10. 1370
    “…This research proposes a multiple-input deep learning-driven ion-sensitive field-effect transistor (ISFET) scheme to predict the concentrations of carbaryl pesticide. …”
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  11. 1371
  12. 1372
    “…Recently, silicon nanowire field-effect transistors (SiNW-FETs) have been drawing enormous interest due to their potential in the biomolecular sensing field. …”
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  13. 1373
  14. 1374
    “…In this study, we fabricated metalloporphyrin-modified graphene field-effect transistors (FETs). Mg-, Ni-, Cu-, and Co-porphyrins were deposited on the graphene FETs, and the transfer characteristics were measured. …”
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  15. 1375
    “…At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS(2)-based FETs targeting RF applications.…”
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  16. 1376
    por Liu, Yuchun, Gu, Fuxing
    Publicado 2021
    “…The 2D MoS(2) field-effect transistor (MoS(2)-FET) array with different configurations utilizes the high-quality MoS(2) film as channels and exhibits favorable performance. …”
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  17. 1377
  18. 1378
    “…Carbon nanotube (CNT) thin-film transistors based on solution processing have great potential for use in future flexible and wearable device technologies. …”
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  19. 1379
  20. 1380
    “…As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better performance. …”
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