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  1. 1401
    “…This proposed work suggests that the developed C(2)N transistor-based sensor could detect sugar molecules with high accuracy.…”
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    Sugar Molecules Detection via C(2)N Transistor-Based Sensor: First Principles Modeling
  2. 1402
    “…In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires only one gate electrode with independent power supply. …”
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    A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor
  3. 1403
    “…While significant advances have been made in terms of organic electronics, the high-performance and stable transistors by printing, and their large-scale integration leading to fast integrated circuits remains a major challenge. …”
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    Printed n- and p-Channel Transistors using Silicon Nanoribbons Enduring Electrical, Thermal, and Mechanical Stress
  4. 1404
    por Gronner, Alfred D.
    Publicado 1974
    Materias: “…Circuitos de transistores Transistores - circuitos.…”
    Libro
    Análisis de circuitos transistorizados/
  5. 1405
    por Jansen, Jan Hendrik
    Publicado 1980
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    Transistor Handbuch: eine umfassende Darstellung der Transistortechnik in Theorie und Praxis für Techniker und Ingenieure
  6. 1406
    “…The analog section of an amplifier for silicon strip detectors typically has a special front transistor, chosen carefully to minimize noise and usually requiring a larger current than the other transistors, and a large number of additional transistors used in shaping sections and for signal-level discrimination. …”
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    Evaluation of the radiation tolerance of SiGe heterojunction bipolar transistors under 24 GeV proton exposure
  7. 1407
    por Mahapatra, Souvik
    Publicado 2016
    “…BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life, and understanding the gate insulator process impact on BTI. …”
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    Fundamentals of bias temperature instability in MOS transistors: characterization methods, process and materials impact, DC and AC modeling
  8. 1408
    por Quan, Ronald
    Publicado 2013
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    Build your own transistor radios: a hobbyist's guide to high-performance and low-powered radio circuits
  9. 1409
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    High-k gate dielectric materials: applications with advanced metal oxide semiconductor field effect transistors (mosfets)
  10. 1410
    Publicado 1965
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    Specification of static power supplies for 50 V, 250 A with current stabilization by a series transistor bank
  11. 1411
    “…To realize oxide semiconductor-based complementary circuits and better transparent display applications, the electrical properties of p-type oxide semiconductors and the performance improvement of p-type oxide thin-film transistors (TFTs) are required. In this study, we report the effects of post-UV/ozone (O(3)) treatment on the structural and electrical characteristics of copper oxide (CuO) semiconductor films and the TFT performance. …”
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    Effects of Post-UV/Ozone Treatment on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors
  12. 1412
    “…VOC sensing was demonstrated by peptide-sensitized, exposed-channel carbon nanotube transistors. The data-to-device pipeline enables the development of novel devices for non-invasive monitoring, diagnostics of diseases, and environmental exposure assessment.…”
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    Data-driven design of a multiplexed, peptide-sensitized transistor to detect breath VOC markers of COVID-19
  13. 1413
    por Xing, Youqiang, Wang, Yun, Liu, Lei, Wu, Ze
    Publicado 2023
    “…As a major public health issue, early cancer detection is of great significance. A field-effect transistor (FET) based on an MoS(2)/C(60) composite nanolayer as the channel material enhances device performance by adding a light source, allowing the ultrasensitive detection of cancer-related miRNA. …”
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    Fabrication of MoS(2)/C(60) Nanolayer Field-Effect Transistor for Ultrasensitive Detection of miRNA-155
  14. 1414
    “…We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). …”
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    Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
  15. 1415
    “…Fin field-effect transistors (FinFETs) have been widely used in electronic devices on account of their excellent performance, but this new type of device is facing many challenges because of size constraints. …”
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    Machine-learning-assisted rational design of 2D doped tellurene for fin field-effect transistor devices
  16. 1416
    por Trinh, Cuc Kim, Oh, Ha Som, Lee, Hanleem
    Publicado 2023
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    The solvent effect on the morphology and molecular ordering of benzothiadiazole-based small molecule for inkjet-printed thin-film transistors
  17. 1417
    “…The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the ZAA decreases. …”
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    Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors
  18. 1418
    “…Long-standing research efforts have enabled the widespread introduction of organic field-effect transistors (OFETs) in next-generation technologies. …”
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    Role of time-dependent foreign molecules bonding in the degradation mechanism of polymer field-effect transistors in ambient conditions
  19. 1419
    “…A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. …”
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    A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors
  20. 1420
    “…The proposed full BDI scheme flow is compatible with the main process flow of NS-GAA transistor fabrication and provides a large window for process fluctuations, such as the thickness of the S/D recess. …”
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    A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors
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