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Circuitos de transistores
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1401“…This proposed work suggests that the developed C(2)N transistor-based sensor could detect sugar molecules with high accuracy.…”
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1402“…In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires only one gate electrode with independent power supply. …”
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1403por Neto, João, Dahiya, Abhishek Singh, Zumeit, Ayoub, Christou, Adamos, Ma, Sihang, Dahiya, Ravinder“…While significant advances have been made in terms of organic electronics, the high-performance and stable transistors by printing, and their large-scale integration leading to fast integrated circuits remains a major challenge. …”
Publicado 2023
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1404por Gronner, Alfred D.Materias: “…Circuitos de transistores Transistores - circuitos.…”
Publicado 1974
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1405
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1406por Metcalfe, J, Dorfan, D E, Grillo, A A, Jones, A, Mendoza, M, Rogers, M, Sadrozinski, H F W, Seiden, A, Spencer, E, Wilder, M, Cressler, J D, Prakash, G, Sutton, A“…The analog section of an amplifier for silicon strip detectors typically has a special front transistor, chosen carefully to minimize noise and usually requiring a larger current than the other transistors, and a large number of additional transistors used in shaping sections and for signal-level discrimination. …”
Publicado 2006
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1407por Mahapatra, Souvik“…BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life, and understanding the gate insulator process impact on BTI. …”
Publicado 2016
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1411“…To realize oxide semiconductor-based complementary circuits and better transparent display applications, the electrical properties of p-type oxide semiconductors and the performance improvement of p-type oxide thin-film transistors (TFTs) are required. In this study, we report the effects of post-UV/ozone (O(3)) treatment on the structural and electrical characteristics of copper oxide (CuO) semiconductor films and the TFT performance. …”
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1412por Nakano-Baker, Oliver, Fong, Hanson, Shukla, Shalabh, Lee, Richard V., Cai, Le, Godin, Dennis, Hennig, Tatum, Rath, Siddharth, Novosselov, Igor, Dogan, Sami, Sarikaya, Mehmet, MacKenzie, J. Devin“…VOC sensing was demonstrated by peptide-sensitized, exposed-channel carbon nanotube transistors. The data-to-device pipeline enables the development of novel devices for non-invasive monitoring, diagnostics of diseases, and environmental exposure assessment.…”
Publicado 2023
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1413“…As a major public health issue, early cancer detection is of great significance. A field-effect transistor (FET) based on an MoS(2)/C(60) composite nanolayer as the channel material enhances device performance by adding a light source, allowing the ultrasensitive detection of cancer-related miRNA. …”
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1414“…We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). …”
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1415“…Fin field-effect transistors (FinFETs) have been widely used in electronic devices on account of their excellent performance, but this new type of device is facing many challenges because of size constraints. …”
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1417por Lee, Song, Lee, Jeong-In, Kim, Chang-Hyun, Kwon, Jin-Hyuk, Lee, Jonghee, Boampong, Amos Amoako, Kim, Min-Hoi“…The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the ZAA decreases. …”
Publicado 2023
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1418por Zohaib, Muhammad, Afzal, Tahmina, Zahir Iqbal, M., Almutairi, Badriah S., Ali Raza, Mohsin, Maqsood, Muhammad Faheem, Raza, M. Akram, Riaz, Saira, Naseem, Shahzad, Iqbal, M. Javaid“…Long-standing research efforts have enabled the widespread introduction of organic field-effect transistors (OFETs) in next-generation technologies. …”
Publicado 2023
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1419por Lee, Chungryeol, Lee, Changhyeon, Lee, Seungmin, Choi, Junhwan, Yoo, Hocheon, Im, Sung Gap“…A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. …”
Publicado 2023
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1420por Yang, Jingwen, Huang, Ziqiang, Wang, Dawei, Liu, Tao, Sun, Xin, Qian, Lewen, Pan, Zhecheng, Xu, Saisheng, Wang, Chen, Wu, Chunlei, Xu, Min, Zhang, David Wei“…The proposed full BDI scheme flow is compatible with the main process flow of NS-GAA transistor fabrication and provides a large window for process fluctuations, such as the thickness of the S/D recess. …”
Publicado 2023
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