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  1. 1461
    “…We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. …”
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    Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors
  2. 1462
    “…This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. …”
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    Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
  3. 1463
    “…Here we report an unconventional approach for fabricating fully integrated active-matrix arrays of pressure-sensitive graphene transistors with air-dielectric layers simply formed by folding two opposing panels. …”
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    Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges
  4. 1464
    “…Here, we demonstrate exceptionally wide tunable terahertz plasma-wave excitation can be realized in the channel of micrometer-level graphene field effect transistors (FET). Owing to the intrinsic high propagation velocity of plasma waves (>~10(8) cm/s) and Dirac band structure, the plasma-wave graphene-FETs yield promising prospects for fast sensing, THz detection, etc. …”
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    Highly Sensitive and Wide-Band Tunable Terahertz Response of Plasma Waves Based on Graphene Field Effect Transistors
  5. 1465
    “…An ion-sensitive field-effect transistor (ISFET) biosensor is thought to be the center of the next era of health diagnosis. …”
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    A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate
  6. 1466
    por Ma, Huipeng, Liu, Na, Huang, Jin-Dou
    Publicado 2017
    “…In comparison, chemical oxidation reduces charge-carrier mobility of rubrene crystal by 2~4 orders of magnitude and increased the hole and electron injection barrier, which partly explains the rubrene-based field-effect transistor performance degrades upon exposure to air. …”
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    A DFT Study on the Electronic Structures and Conducting Properties of Rubrene and its Derivatives in Organic Field-Effect Transistors
  7. 1467
    por Sakai, Shigeki, Takahashi, Mitsue
    Publicado 2010
    “…We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi(2)Ta(2)O(9)/(HfO(2))(x)(Al(2)O(3))(1−x) (Hf-Al-O) and Pt/SrBi(2)Ta(2)O(9)/HfO(2) gate stacks. …”
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    Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory
  8. 1468
    “…A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. …”
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    A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor
  9. 1469
    “…The shift in the transistor threshold voltage was measured in the dark and under illumination to estimate the density of cytochrome and coupled RCs on the gate of the transistor. …”
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    Electrochemical Field-Effect Transistor Utilization to Study the Coupling Success Rate of Photosynthetic Protein Complexes to Cytochrome c
  10. 1470
    por Wang, Hui, Mercier, Patrick P.
    Publicado 2017
    “…Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) capacitors that, via a discrete-time feedback loop that equalizes charging time, digitize temperature directly. …”
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    Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors
  11. 1471
    “…ABSTRACT: The purpose of this study was to develop and implement an in silico model of indigoid-based single-electron transistor (SET) nanodevices, which consist of indigoid molecules from natural dye weakly coupled to gold electrodes that function in a Coulomb blockade regime. …”
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    In Silico Modeling of Indigo and Tyrian Purple Single-Electron Nano-Transistors Using Density Functional Theory Approach
  12. 1472
    “…The silicon nanoribbon (Si-NR) transistor is fabricated on a Silicon-on-Insulator (SOI) substrate by a top–down approach with complementary metal oxide semiconductor (CMOS)-compatible technology. …”
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    Top-down nanofabrication of silicon nanoribbon field effect transistor (Si-NR FET) for carcinoembryonic antigen detection
  13. 1473
    por You, Hsin-Chiang, Wang, Cheng-Jyun
    Publicado 2017
    “…A low temperature solution-processed thin-film transistor (TFT) using zinc oxide (ZnO) film as an exposed sensing semiconductor channel was fabricated to detect and identify various solution solvents. …”
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    Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents
  14. 1474
    “…In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. …”
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    Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
  15. 1475
    “…The application of high-κ oxide dielectrics allows the transistors run under a low operating voltage (−4 V). …”
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    Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors
  16. 1476
    por Woo, Hyunsuk, Jeon, Sanghun
    Publicado 2017
    “…Thus, understanding defects and charge trapping in oxide semiconductor transistors is required for being core device element in reliable production lines. …”
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    Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
  17. 1477
    “…Historically, graphene-based transistor fabrication has been time-consuming due to the high demand for carefully controlled Raman spectroscopy, physical vapor deposition, and lift-off processes. …”
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    Rapid Fabrication of Graphene Field-Effect Transistors with Liquid-metal Interconnects and Electrolytic Gate Dielectric Made of Honey
  18. 1478
    “…Tungsten-indium-zinc-oxide thin-film transistors (WIZO-TFTs) were fabricated using a radio frequency (RF) co-sputtering system with two types of source/drain (S/D)-electrode material of conducting WIZO (homojunction structure) and the indium-tin oxide (ITO) (heterojunction structure) on the same WIZO active-channel layer. …”
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    Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor
  19. 1479
    “…The band gap properties of amorphous SiInZnO (a-SIZO) thin-film transistors (TFTs) with different Si concentrations have been studied. …”
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    Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors
  20. 1480
    “…In this work, we demonstrate for the first time an ultra-low contact resistance few-layered black phosphorus (BP) transistor with metallic PGe(x) contacts formed by rapid thermal annealing (RTA). …”
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    Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance
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