“…We find that p–n like junctions are formed in graphene/SWCNT transistors, and the contact resistance in the junction is observed to be ~ 494 and ~ 617 kΩ in case of metallic SWCNT (m-SWCNT) and semiconducting SWCNT (s-SWCNT), respectively. …”
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“…In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. …”
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“…A semi-analytical extraction method of interface and bulk density of states (DOS) is proposed by using the low-frequency capacitance–voltage characteristics and current–voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs). In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson’s equation followed by device simulation. …”
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“…[Image: see text] We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. …”
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“…The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.…”
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“…In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al [Formula: see text] O [Formula: see text]) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). …”
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“…Their integration with organic-transistor based sensors, never explored before, paves the way to a new class of low-cost, easy-to-use, and portable genetic sensors with enhanced performances. …”
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“…Organic/polymer transistors can enable the fabrication of large-area flexible circuits. …”
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“…A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. …”
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“…The transistors use indium-gallium-zinc-oxide as a semiconductor and a multilayer dielectric based on silicon oxide and tantalum oxide. …”
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“…Neutral DNA analogs as probes for the detection of target oligomers on the biosensors based on the field-effect transistor (FET) configuration feature advantages in the enhancement of sensitivity and signal-to-noise ratio. …”
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“…The development of p-type metal oxide thin-film transistors (TFTs) is far behind the n-type counterparts. …”
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“…Flexible pressure sensors based on organic field‐effect transistors (OFETs) have emerged as promising candidates for electronic‐skin applications. …”
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“…Both p-type and n-type MoTe(2) transistors are needed to fabricate complementary electronic and optoelectronic devices. …”
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“…In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge [Formula: see text] Sb [Formula: see text] Te [Formula: see text] (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. …”
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“…Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor. [Image: see text]…”
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“…Both of these materials were designed to be donor semiconducting components, exerted excellent solubility in common organic solvents, showed excellent thermal stability, and their promising optoelectronic properties encouraged us to scrutinize charge-carrier mobilities using solution-processable organic field effect transistors. Hole mobilities of the order of 2.2 × 10(−4) cm(2)/Vs and 7.8 × 10(−3) cm(2)/Vs were measured using S10 and S11 as active materials, respectively.…”
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“…We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. …”
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“…Organic electrochemical transistors (OECTs) are promising devices for applications in in vitro and in vivo measurements. …”
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“…The oxide thin-film transistor (TFT) can be a good candidate as a switching device for the self-capacitive fingerprint sensor. …”
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