Materias dentro de su búsqueda.
Materias dentro de su búsqueda.
Circuitos de transistores
28
Transistores
21
Semiconductores
14
Electrónica
8
Circuitos integrados
7
Transistores de efecto de campo
7
Circuitos electrónicos
6
Diseño y construcción
4
Electrónica digital
4
Transistores de unión
4
Amplificadores de transistores
3
Diodos semiconductores
3
Ingeniería
3
Transistores bipolares
3
Circuitos electronicos
2
Circuitos eléctricos
2
Circuitos integrados lineales
2
Diodos
2
Diseño de circuitos electrónicos
2
Historia
2
Semiconductores de metal-óxido complementarios
2
Ciencia
1
Circuitos impresos
1
Circuitos integrados digitales
1
Circuitos lógicos
1
Circuitos lógicos Transistor-transistor
1
Circuitos transistorizados
1
Comunicación intercultural
1
Comunicación y cultura
1
Comunidades indígenas y medios de comunicación de masas
1
-
1501A Novel Graphene Metal Semi-Insulator Semiconductor Transistor and Its New Super-Low Power Mechanism“…The state-of-art Si Matel-Oxide-Semiconductor Field-Effect-Transistor (MOS-FET) meets the problem of the Power Consumption (P(C)) can not be effecively deceased guided by the Moore’s Law as before. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1502“…The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1503“…We drive these actuators by using ion gel-gated organic thin film transistors (OTFTs) that are ideally suited as drive transistors for these actuators in terms of drive current and frequency requirements. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1504por Barros, Raquel, Saji, Kachirayil J., Waerenborgh, João C., Barquinha, Pedro, Pereira, Luís, Carlos, Emanuel, Martins, Rodrigo, Fortunato, ElviraEnlace del recurso
Publicado 2019
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1505“…We have successfully monitored the effect of progesterone and Ca(2+) on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated by sperm respiration based on the principle of the ISFET sensor. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1506“…In this work, we have successfully demonstrated the junctionless (JL) transistors with two-dimensional-like (2D-like) nano-sheet (NS) material, amorphous indium tungsten oxide (a-IWO), as an active channel layer. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1507por Vasimalla, Suresh, Subbarao, Nimmakayala V. V., Gedda, Murali, Goswami, Dipak K., Iyer, Parameswar Krishnan“…[Image: see text] It is well-known that the improvement in the performance of organic field-effect transistors (OFETs) relies primarily on growth properties of organic molecules on gate dielectrics, their interface behavior, and on understanding the physical processes occurring during device operation. …”
Publicado 2017
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1508“…On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-heating effect and surface temperature increase phenomenon are observed on novel top-gate β-Ga(2)O(3) on insulator field-effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO(2)/Si substrate, the temperature rise above room temperature of β-Ga(2)O(3) on the insulator field-effect transistor can be reduced by a factor of 3 and thereby the self-heating effect is significantly reduced. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1509por Bhat, Kiesar Sideeq, Nakate, Umesh Tukaram, Yoo, Jin-Young, Wang, Yousheng, Mahmoudi, Tahmineh, Hahn, Yoon-Bong“…In this study, facile enzymeless phosphate ion detection is reported using a nozzle-jet-printed silver/reduced graphene oxide (Ag/rGO) composite-based field-effect transistor sensor on flexible and disposable polymer substrates. …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1510por Chou, Wei-Cheng, Hu, Wen-Pin, Yang, Yuh-Shyong, Chan, Hardy Wai-Hong, Chen, Wen-Yih“…Silicon nanowire (SiNW) field-effect transistors (FETs) is a powerful tool in genetic molecule analysis because of their high sensitivity, short detection time, and label-free detection. …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1511por Hideshima, Sho, Hayashi, Hiroki, Hinou, Hiroshi, Nambuya, Shunsuke, Kuroiwa, Shigeki, Nakanishi, Takuya, Momma, Toshiyuki, Nishimura, Shin-Ichiro, Sakoda, Yoshihiro, Osaka, TetsuyaEnlace del recurso
Publicado 2019
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1512“…In this paper, we demonstrate the possibility of direct protein sensing beyond the Debye length limit using a molecular-charge-contact (MCC)-based ion-sensitive field-effect transistor (ISFET) sensor combined with a microfluidic device. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1513por Seo, Youngjin, Jeong, Hwan-Seok, Jeong, Ha-Yun, Park, Shinyoung, Jang, Jun Tae, Choi, Sungju, Kim, Dong Myong, Choi, Sung-Jin, Jin, Xiaoshi, Kwon, Hyuck-In, Kim, Dae Hwan“…We investigated the effect of simultaneous mechanical and electrical stress on the electrical characteristics of flexible indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). The IGZO TFTs exhibited a threshold voltage shift (∆V(TH)) under an application of positive-bias-stress (PBS), with a turnaround behavior from the positive ∆V(TH) to the negative ∆V(TH) with an increase in the PBS application time, whether a mechanical stress is applied or not. …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1514por Bhardwaj, Bishwajeet Singh, Sugiyama, Takeshi, Namba, Naoko, Umakoshi, Takayuki, Uemura, Takafumi, Sekitani, Tsuyoshi, Verma, Prabhat“…Pentacene, an organic molecule, is a promising material for high-performance field effect transistors due to its high charge carrier mobility in comparison to usual semiconductors. …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1515por Neuper, Felix, Chandresh, Abhinav, Singaraju, Surya Abhishek, Aghassi-Hagmann, Jasmin, Hahn, Horst, Breitung, Ben“…This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1516por Yu, Junsu, Kim, Sihyun, Ryu, Donghyun, Lee, Kitae, Kim, Changha, Lee, Jong-Ho, Kim, Sangwan, Park, Byung-Gook“…L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel. …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1517“…In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1518“…In this article, we simulated a novel graphene nanoribbon based field effect transistor (FET) and used it to detect propane and butane gases. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1519por Klinghammer, Stephanie, Rauch, Sebastian, Pregl, Sebastian, Uhlmann, Petra, Baraban, Larysa, Cuniberti, Gianaurelio“…We demonstrate the functionalization of silicon nanowire based field effect transistors (SiNW FETs) FETs with stimuli-responsive polymer brushes of poly(N-isopropylacrylamide) (PNIPAAM) and poly(acrylic acid) (PAA). …”
Publicado 2020
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
1520“…We fabricated a low voltage-operated flexible organic field-effect transistor (OFET) based on crosslinked poly (4-vinyl phenol) (PVP) polymer blended with novel ceramic calcium titanate nanoparticles (CaTiO(3) NPs) as gate dielectric. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto