“…In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. …”
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“…We show that an SnO(2)-based water-gate thin film transistor (WGTFT) biosensor responds to a waterborne analyte, the spike protein of the SARS-CoV-2 virus, by a parallel potentiometric and capacitive mechanism. …”
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“…A glass pH electrode and ion-sensitive field-effect transistor (ISFET) can measure the time course of pH changes in a microenvironment as a result of physiological and biological activities. …”
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“…The formation of ohmic contacts increases the charge carrier mobility of MoTe(2) field-effect transistor devices to 16.1 cm(2) V(−1)s(−1) with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. …”
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“…One of the leading potential technologies is field-effect transistor (FET)-based sensors to improve response time, sensitivity, and stability. …”
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“…InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). …”
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“…The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which is attributed to the large number of traps formed by the oxidation of 2D InSe and adsorption to impurities. …”
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“…The hole mobilities extracted from transistors fabricated using blends of PIDTBT with phenyl or methoxy functionalized unsymmetrical BTBTs were double those measured for devices fabricated using pristine PIDTBT. …”
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“…[Image: see text] We demonstrate a graphene–MoS(2) architecture integrating multiple field-effect transistors (FETs), and we independently probe and correlate the conducting properties of van der Waals coupled graphene–MoS(2) contacts with those of the MoS(2) channels. …”
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“…Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μ(FE)) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50–100 cm(2)V(−1)s(−1)). …”
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“…This doping technique allows us to improve the room temperature mobility of (PEA)(2)SnI(4) field-effect transistors from 0.25 to 0.68 cm(2) V(−1) s(−1) thanks to reduced trapping effects in the doped devices. …”
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“…Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. …”
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“…Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. …”
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“…Herein, active layers of field-effect transistor (FETs) devices and chemiresistor gas sensors with high performance were constructed by loading Cu(3)(HITP)(2) (HITP = 2,3,6,7,10,11-hexaiminotriphenylene) in situ-axial anchoring on oriented nanofiber arrays prepared via electrospinning. …”
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“…Next, a field-effect transistor (FET) incorporating the highly aligned Si NWs exhibits a high effective mobility of up to 85.7 cm(2) V(−1) s(−1), and an on-current of 0.58 µA. …”
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“…Field-effect transistors (FET) composed of transition metal dichalcogenide (TMDC) materials have gained huge importance as biosensors due to their added advantage of high sensitivity and moderate bandgap. …”
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“…Low-frequency electronic noise is an important parameter used for the electronic and sensing applications of transistors. Here, we performed a systematic study on the low-frequency noise mechanism for both p-channel and n-channel MoTe(2) field-effect transistors (FET) at different temperatures, finding that low-frequency noise for both p-type and n-type conduction in MoTe(2) devices come from the variable range hopping (VRH) transport process where carrier number fluctuations (CNF) occur. …”
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“…By spatially adsorbing F4TCNQ molecule and K atoms on the source and drain leads, respectively, we designed a p–n homojunction SiGe field-effect transistor (FET). It is predicted that the built F4TCNQ-4K/SiGe FET can meet the requirements for high-performance (the high current density) and low-power (low subthreshold swing (SS)) applications, according to the International Technology Roadmap for Semiconductors in 2028. …”
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“…Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. …”
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“…We propose archetype tunneling field effect transistors (TFETs) with negative capacitance (NC) and use the rigorous ab initio quantum transport simulation to explore the device performance limits of the TFETs based on monolayer (ML) GeSe and GeTe along with their NC counterparts. …”
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