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  1. 1561
  2. 1562
    por Cho, Seong-Kun, Cho, Won-Ju
    Publicado 2020
    “…To this end, a systematic study was conducted on the effects of microwave-assisted calcination on the microstructure and optical and mechanical properties of electrospun IGZO nanofibers used in high-performance field-effect transistors (FETs). To clarify the role of microwave annealing (MWA) on the characteristics of the electrospun nanofibers, calcination was carried out using two techniques: MWA and conventional thermal annealing (CTA). …”
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  3. 1563
    “…In contrast to the commonly present UV light-stimulated synaptic oxide thin-film transistors, this study demonstrates a violet light (wavelength of 405 nm) stimulated zinc–tin oxide (ZTO) photoelectric transistor for potential application in optical neuromorphic computation. …”
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  4. 1564
    “…Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising a floating-gate of IHP QDs embedded in a polystyrene matrix. …”
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  5. 1565
    “…Correction for ‘All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator’ by Jin-Yong Hong et al., RSC Adv., 2015, 5, 105785–105788.…”
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  6. 1566
    “…The better performing PIDG-BT-C20 was used for the fabrication of water-gated organic field-effect transistors (WGOFETs), which showed excellent stability at ambient conditions. …”
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  7. 1567
    por Chen, Zhuo, Lan, Linfeng, Peng, Junbiao
    Publicado 2019
    “…Low-temperature giant-dielectric-constant thin films (In(0.0025)Nb(0.0025)Ti(0.995)O(2)) fabricated with simple radio frequency (RF) sputtering on glass substrates are employed as the gate dielectrics for thin-film transistors (TFTs) for the first time. The 380 nm-thick In(0.0025)Nb(0.0025)Ti(0.995)O(2) film exhibited a quasi-static capacitance of as high as 36 156 nF cm(−2) with a quasi-static permittivity of 15 525 (and 7607 nF cm(−2) at 1 kHz). …”
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  8. 1568
    “…The properties of semiconductor/dielectric interfaces are crucial to the performance of polymer field-effect transistors. The key to fabricating high-performance polymer transistors by spin-coating is solving solvent corrosion issues, wherein the solvent of the top polymer produces a rough interface or damage on the underlying polymer layer during deposition. …”
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  9. 1569
    “…The correlation between the post-deposition thermal treatment and the characteristics of a transistor was investigated and excellent performance of the transistor was demonstrated.…”
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  10. 1570
    “…As an emerging class of synaptic devices, organic electrochemical transistors (OECTs) have attracted significant interest due to ultralow voltage operation, analog conductance tuning, mechanical flexibility, and biocompatibility. …”
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  11. 1571
    “…We demonstrate that electrolyte-gated organic field-effect transistors (EGOFETs) are able to monitor in real-time the crystallization process in an evaporating droplet. …”
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  12. 1572
    por Wong, Hei, Kakushima, Kuniyuki
    Publicado 2022
    “…This work performs a detailed comparison of the channel width folding effectiveness of the FinFET, vertically stacked nanosheet transistor (VNSFET), and vertically stacked nanowire transistor (VNWFET) under the constraints of the same vertical (fin) height and layout footprint size (fin width) defined by the same lithography and dry etching capabilities of a foundry. …”
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  13. 1573
    “…Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. …”
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  14. 1574
    “…In this work, we report phosphorodiamidate morpholino oligomers (PMO)-graphene quantum dots (GQDs)-functionalized reduced graphene oxide (RGO) field effect transistor (FET) biosensors for ultrasensitive detection of exosomal microRNAs. …”
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  15. 1575
    “…Recently, tin oxide (SnO(2)) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. …”
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  16. 1576
    “…The low–temperature poly–Si oxide (LTPO) backplane is realized by monolithically integrating low–temperature poly–Si (LTPS) and amorphous oxide semiconductor (AOS) thin–film transistors (TFTs) in the same display backplane. The LTPO–enabled dynamic refreshing rate can significantly reduce the display’s power consumption. …”
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  17. 1577
  18. 1578
    “…The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. …”
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  19. 1579
  20. 1580
    “…We investigated a novel X-ray detector (FXRD-4343FAW, VIEWORKS, Anyang, Korea) composed of a thin-film transistor based on amorphous silicon with a flexible plastic substrate. …”
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