“…X-ray diffraction imaging was used to monitor the local strains that developed around individual n–p–n bipolar transistors within fully encapsulated packages under conditions of extremely high forward bias to simulate accelerated ageing. …”
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“…High-performance n-type organic electrochemical transistors (OECTs) are essential for logic circuits and sensors. …”
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“…The inner spacer thickness (T(IS)) variations in sub-3-nm, node 3-stacked, nanosheet field-effect transistors (NSFETs) were investigated using computer-aided design simulation technology. …”
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“…A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one FBFET, and each transistor is located on the top tier and one on the bottom tier in a monolithic 3D integration, respectively. …”
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“…The applications of thin-film transistors (TFTs) based on oxide semiconductors are limited due to instability under negative bias illumination stress (NBIS). …”
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“…We demonstrated the fabrication of exceptionally high-performance, hysteresis-free n-type solution-processed oxide transistors comprising an In(2)O(3)/ZnO double layer as an active channel with an electron mobility of over 50 cm(2) V(−1) s(−1), on/off ratio of ~10(7), subthreshold swing of 108 mV dec(−1), and high bias-stress stability. …”
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“…In this work, a highly sensitive flexible glucose sensor based on a field effect transistor (FET) has been fabricated. It is shown that the proposed flexible transistor can be used as new non-enzymatic blood glucose test strips. …”
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“…Here, we develop a self-powered vertical tribo-transistor (VTT) based on MXenes for multi-sensing-memory-computing function and multi-task emotion recognition, which integrates triboelectric nanogenerator (TENG) and transistor in a single device with the simple configuration of vertical organic field effect transistor (VOFET). …”
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“…The electrodes with TIPS-pentacene/PS (MW = 4000) binary films at a 40 wt% TIPS-pentacene ratio demonstrate the outstanding room-temperature field-effect mobility of 1.215 cm(2) V(−1) s(−1), four times higher than that of pure TIPS-pentacene transistors (100 wt%). The performance improvement of the TIPS-pentacene layers is highly attributed to the ideal spherulite structure and thick molecular stacking properties, which can guarantee favorable charge transport paths through organic films. …”
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“…Our results not only provide valuable insights into the bending mechanism, but also demonstrate the untapped potential of mechanically flexible semiconducting crystals for designing all flexible durable field-effect transistor devices.…”
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“…In this work, we present microbiological verification of a novel approach to food quality monitoring and spoilage detection using an electronic nose based on organic field-effect transistors (OFETs) and its application for distinguishing products. …”
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“…In this study, we introduced H-terminated diamond solution-gate field-effect transistor (H-diamond SGFET) to detect trace SARS-CoV-2 N-protein, which plays an important role in replication and transcription of viral RNA. 1-Pyrenebutyric acid-N-hydroxy succinimide ester (Pyr-NHS) was modified on H-diamond surface as linker, on which the specific antibody of SARS-CoV-2 N-protein was catenated. …”
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“…Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In(2)O(3)/In(2)O(3):polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO(2). …”
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“…In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In(2)O(3)/HfO(2) thin film transistor (TFT). All the electrical properties of In(2)O(3) based on HfO(2) were systematically analyzed. …”
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“…This paper is focused on the study of the noise performance of 65 nm CMOS transistors at extremely high total ionizing dose (TID) levels of the order of several hundreds of Mrad(SiO2). …”
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“…To finish, a first analysis on three families of bipolar transistors is presented together with the independent results from three external reports, with a good agreement between the experimental results and the expected ones.…”
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“…Herein, we investigated the applicability of thick film and bulk disk forms of aluminum-doped zinc oxide (AZO) for low-dose X-ray radiation dosimetry using the extended gate field effect transistor (EGFET) configuration. The samples were fabricated using the chemical bath deposition (CBD) technique. …”
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“…In this work, the authors demonstrate a novel vertically‐stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p‐channel polycrystalline silicon (poly‐Si) and n‐channel amorphous indium tungsten oxide (a‐IWO), with a low footprint than planar structure. …”
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“…We compare the pH sensing performance of non-functionalized carbon nanotubes (CNT) field-effect transistors (p-CNTFET) and CNTFET functionalized with a conjugated polyfluorene polymer (labeled FF-UR) bearing urea-based moieties (f-CNTFET). …”
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“…Organic Electrochemical Transistors This cover demonstrates a bio‐tissue compatible and biodegradable electronics neural interface for efficient monitoring and recording of brain activities. …”
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