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  1. 1661
  2. 1662
    “…We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si(1−x)Ge(x)) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH(4) and GeH(4) gas mixture, and a Si(1−x)Ge(x) thin film was crystallized using different excimer laser densities. …”
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  3. 1663
    “…[Image: see text] Here, we report flexible thermal sensors based on organic field-effect transistors (OFETs) that are fabricated using polymeric channel and gate-insulating layers on flexible polymer film substrates. …”
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  4. 1664
  5. 1665
    “…[Image: see text] In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. …”
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  6. 1666
    “…To improve the performance of amorphous InGaZnO(x) (a-IGZO) thin film transistors (TFTs), in this thesis, Cs(+) ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. …”
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  7. 1667
    “…Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. …”
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  8. 1668
  9. 1669
    “…In particular, MOS field-effect transistors (FETs) using the spray pyrolysis technique have drawn huge attention with the electrical performances compatible with those of vacuum-based FETs. …”
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  10. 1670
    “…In this work, the topic of the detrimental contact effects in organic thin-film transistors (OTFTs) is revisited. In this case, contact effects are considered as a tool to enhance the characterization procedures of OTFTs, achieving more accurate values for the fundamental parameters of the transistor threshold voltage, carrier mobility and on-off current ratio. …”
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  11. 1671
    “…A single molecular transistor is considered in the presence of electron-electron interaction, electron-phonon interaction, an external magnetic field and dissipation. …”
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  12. 1672
    “…Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. …”
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  13. 1673
    por Hu, Shihui, Jia, Yunfang
    Publicado 2019
    “…Porphyrin functionalized reduced graphene oxide (rGO) is attractive for multi-disciplinary research studies, and its improvements for an rGO-based field effect transistor (rGO-FET) were exploited to realize ultrasensitive biochemical and clinical assay. …”
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  14. 1674
    “…By bar coating from o‐xylene solution, PDPPT3‐HDO forms aligned films and exhibits high hole mobility of up to 9.24 cm(2) V(−1) s(−1) in organic thin film transistors (OTFTs). Notably, the bar‐coated OTFT based on PDPPT3‐HDO shows a close to ideal transistor model and a high mobility reliability factor of 87%. …”
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  15. 1675
    “…A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. …”
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  16. 1676
    “…In this work, an insulated gate bipolar transistor (IGBT) is proposed that introduces a portion of the p-polySi/p-SiC heterojunction on the collector side to reduce the tail current during device turn-offs. …”
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  17. 1677
    “…To confirm DA exocytosis based on aptasensors, DA sensitivity and selectivity were monitored using liquid-ion gated field-effect transistors (FETs). The minimum detection level (MDL; 100 pM) of the aptasensors was determined, and their MDL was optimized by controlling the diameter of the CPNTs owing to their different capacities for aptamer introduction. …”
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  18. 1678
    “…This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate-all-around tunnel field-effect transistors. …”
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  19. 1679
    “…Among the many investigated sensing devices, organic field-effect transistors (OFETs), organic electrochemical transistors (OECTs) and microcantilevers (MCLs) have been chosen. …”
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  20. 1680
    “…AlGaN/GaN high electron mobility transistors (HEMTs) were used to sense the binding between double stranded DNA (dsDNA) and the severe acute respiratory syndrome coronavirus (SARS-CoV) nucleocapsid protein (N protein). …”
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