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41por Fioranelli, Massimo, Sepehri, Alireza, Roccia, Maria Grazia, Linda, Cota, Rossi, Chiara, Vojvodic, Petar, Lotti, Jacopo, Barygina, Victoria, Vojvodic, Aleksandra, Wollina, Uwe, Tirant, Michael, Thuong, Nguyen Van, Lotti, Torello“…Recently, some scientists from NASA have claimed that there may be a black hole like structure at the centre of the earth. We show that the existence of life on the earth may be a reason that this black hole like object is a black brane that has been formed from biological materials like DNA. …”
Publicado 2019
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42“…In this paper, a new method of interference connection was designed based on the shape memory effect of shape memory alloy. Using the method of numerical simulation, a finite element model was established to analyze the stress–strain rule of the bolt and the hole wall under different interference fit sizes. …”
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43por Yu, Tianpeng, Liu, Zhenliang, Wang, Yiru, Zhang, Lunqiang, Hou, Shuyi, Wan, Zuteng, Yin, Jiang, Gao, Xu, Wu, Lei, Xia, Yidong, Liu, Zhiguo“…The depth distribution of hole-traps in PVN film of pentacene OFET is also provided.…”
Publicado 2023
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44“…A comprehensive study on the ternary dielectric, LaGdO(3), synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.…”
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45por Shanmugasundaram, Bharanidharan, Aher, Yogesh D., Aradska, Jana, Ilic, Marija, Daba Feyissa, Daniel, Kalaba, Predrag, Aher, Nilima Y., Dragacevic, Vladimir, Saber Marouf, Babak, Langer, Thierry, Sitte, Harald H., Hoeger, Harald, Lubec, Gert, Korz, Volker“…R-MO at both doses significantly enhanced spatial reference memory during the last training session and during memory retrieval compared to DMSO vehicle but not when compared to saline treated rats. …”
Publicado 2017
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46por Kim, Sae-Wan, Kwon, JinBeom, Lee, Jae-Sung, Kang, Byoung-Ho, Lee, Sang-Won, Jung, Dong Geon, Lee, Jun-Yeop, Han, Maeum, Kim, Ok-Geun, Saianand, Gopalan, Jung, Daewoong“…A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al(2)O(3)/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. …”
Publicado 2021
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47“…The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. …”
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48“…A shape memory polyetherurethane is used to prepare various surface textures including 2 μm- and 200 nm-gratings, 250 nm-pillars and 200 nm-holes. …”
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50por Lutz, Thomas, Veissier, Lucile, Thiel, Charles W., Woodburn, Philip J. T., Cone, Rufus L., Barclay, Paul E., Tittel, Wolfgang“…High-quality rare-earth-ion (REI) doped materials are a prerequisite for many applications such as quantum memories, ultra-high-resolution optical spectrum analyzers and information processing. …”
Publicado 2016
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51“…In addition, the existence of holes disrupts the orderly propagation of shock waves, changes the shock wave front from a plane to a concave surface, and reduces the propagation speed of shock waves. …”
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52“…However, Mn-exposed Hfe(-/-) mice spent more time to find the target hole than Mn-drinking Hfe(+/+) mice (p = 0.028). …”
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53por Castilla-Ortega, Estela, Hoyo-Becerra, Carolina, Pedraza, Carmen, Chun, Jerold, Rodríguez De Fonseca, Fernando, Estivill-Torrús, Guillermo, Santín, Luis J.“…Corticosterone levels were measured in another a separate cohort of mice. Finally, the hole-board test assessed spatial reference and working memory. …”
Publicado 2011
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54por Narzt, Marie-Sophie, Kremslehner, Christopher, Golabi, Bahar, Nagelreiter, Ionela-Mariana, Malikovic, Jovana, Hussein, Ahmed M., Plasenzotti, Roberto, Korz, Volker, Lubec, Gert, Gruber, Florian, Lubec, Jana“…The extent of decline in spatial memory performance of rats, assessed by a hole-board test, reaches from unimpaired and comparable to young individuals to severely memory impaired. …”
Publicado 2022
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55por Wang, Yixuan, Liu, Jian, Hui, Yanping, Wu, Zhongheng, Wang, Ling, Wu, Xiang, Bai, Yihua, Zhang, Qiaojun, Li, Libo“…The object-place recognition and hole-board test were used to assess hippocampus-dependent memory. …”
Publicado 2023
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56por Antonides, Alexandra, Schoonderwoerd, Anne C., Scholz, Gabi, Berg, Brian M., Nordquist, Rebecca E., van der Staay, Franz Josef“…In this task, 4 of 16 holes contain a hidden food reward, allowing measurement of working (short-term) memory and reference (long-term) memory (RM) simultaneously. …”
Publicado 2015
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57“…Behavioral studies indicated that animals of GVII showed higher inflexion ratio (0.40 ± 0.03) for EPM, spent most of time (227.17 ± 2.13 s) in dark area of light dark test and had many hole pockings (39.83 ± 1.88) for hole board paradigm. …”
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58“…On the sixth day, their spatial memory was evaluated on the maze. Time, distance, the number of errors, and the taking strategy for reaching the target hole were considered as the parameters for the spatial learning and memory evaluation. …”
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59por Jin, Risheng, Wang, Jin, Shi, Keli, Qiu, Beibei, Ma, Lanchao, Huang, Shihua, Li, Zhengquan“…Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron–hole diffusion lengths and excellent absorption properties. …”
Publicado 2020
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60por Shih, Chien-Chung, Lee, Wen-Ya, Chiu, Yu-Cheng, Hsu, Han-Wen, Chang, Hsuan-Chun, Liu, Cheng-Liang, Chen, Wen-Chang“…Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. …”
Publicado 2016
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