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Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector chara...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
2006
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| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2007.08.206 http://cds.cern.ch/record/1000323 |