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Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector chara...
Autores principales: | Lazanu, Sorina, Lazanu, Ionel |
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Lenguaje: | eng |
Publicado: |
2006
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2007.08.206 http://cds.cern.ch/record/1000323 |
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