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Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity

The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector chara...

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Detalles Bibliográficos
Autores principales: Lazanu, Sorina, Lazanu, Ionel
Lenguaje:eng
Publicado: 2006
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2007.08.206
http://cds.cern.ch/record/1000323

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