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Ion implantation in semiconductors: silicon and germanium

Detalles Bibliográficos
Autores principales: Mayer, James W, Davies, John A, Eriksson, Lennart
Lenguaje:eng
Publicado: Academic Press 1970
Materias:
Acceso en línea:http://cds.cern.ch/record/100622
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author Mayer, James W
Davies, John A
Eriksson, Lennart
author_facet Mayer, James W
Davies, John A
Eriksson, Lennart
author_sort Mayer, James W
collection CERN
id cern-100622
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1970
publisher Academic Press
record_format invenio
spelling cern-1006222021-04-22T06:16:02Zhttp://cds.cern.ch/record/100622engMayer, James WDavies, John AEriksson, LennartIon implantation in semiconductors: silicon and germaniumEngineeringAcademic Pressoai:cds.cern.ch:1006221970
spellingShingle Engineering
Mayer, James W
Davies, John A
Eriksson, Lennart
Ion implantation in semiconductors: silicon and germanium
title Ion implantation in semiconductors: silicon and germanium
title_full Ion implantation in semiconductors: silicon and germanium
title_fullStr Ion implantation in semiconductors: silicon and germanium
title_full_unstemmed Ion implantation in semiconductors: silicon and germanium
title_short Ion implantation in semiconductors: silicon and germanium
title_sort ion implantation in semiconductors: silicon and germanium
topic Engineering
url http://cds.cern.ch/record/100622
work_keys_str_mv AT mayerjamesw ionimplantationinsemiconductorssiliconandgermanium
AT daviesjohna ionimplantationinsemiconductorssiliconandgermanium
AT erikssonlennart ionimplantationinsemiconductorssiliconandgermanium