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Radiation-induced edge effects in deep submicron CMOS transistors
The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at...
| Autores principales: | , |
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| Lenguaje: | eng |
| Publicado: |
2005
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| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2005.860698 http://cds.cern.ch/record/1024467 |