Development of a CMOS SOI pixel detector

We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 m fullydepleted- SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 x 2.5mm2 consisti...

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Detalles Bibliográficos
Autores principales: Ishino, Hirokazu, Arai, Y, Hazumi, M, Ikegami, Y, Kohriki, T, Tajima, O, Terada, S, Tsuboyama, T, Unno, Y, Ushiroda, Y, Ikeda, H, Hara, K, Ishino, H, Kawasaki, T, Miyake, H, Martin, E, Varner, G, Tajima, H, Ohno, M, Fukuda, K, Komatsubara, H, Ida, J
Lenguaje:eng
Publicado: CERN 2007
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2007-001.263
http://cds.cern.ch/record/1027476

Internet

https://dx.doi.org/10.5170/CERN-2007-001.263
http://cds.cern.ch/record/1027476

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