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Development of a CMOS SOI pixel detector
We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 m fullydepleted- SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 x 2.5mm2 consisti...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
CERN
2007
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.5170/CERN-2007-001.263 http://cds.cern.ch/record/1027476 |
Sumario: | We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 m fullydepleted- SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 x 2.5mm2 consisting of 20 x 20 um2 pixels have been designed and manufactured. Performance tests with a laser light illumination and a . ray radioactive source indicate successful operation of the detector. We also brie y discuss the back gate effect as well as the simulation study. |
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