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Low-noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies
Deep sub-micron CMOS technologies provide wellestablished solutions to the implementation of low-noise front-end electronics in various detector applications. The IC designers’ effort is presently shifting to 130 nm CMOS technologies, or even to the next technology node, to implement readout integra...
Autores principales: | Manghisoni, M, Ratti, L, Re, V, Speziali, V, Traversi, G |
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Lenguaje: | eng |
Publicado: |
CERN
2007
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.5170/CERN-2007-001.483 http://cds.cern.ch/record/1034304 |
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