Total Ionizing Dose effects in 130-nm commercial CMOS technologies for HEP experiments

The impact of foundry-to-foundry variability and bias conditions during irradiation on the Total Ionizing Dose (TID) response of commercial 130-nm CMOS technologies have been investigated for applications in High Energy Physics (HEP) experiments. n- and p-channel MOSFETs from three different manufac...

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Detalles Bibliográficos
Autores principales: Gonella, L, Faccio, F, Silvestri, M, Gerardin, S, Pantano, D, Re, V, Manghisoni, M, Ratti, L, Ranieri, A
Lenguaje:eng
Publicado: 2007
Materias:
Detectors and Experimental Techniques
Health Physics and Radiation Effects
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2007.07.068
http://cds.cern.ch/record/1064030

Internet

https://dx.doi.org/10.1016/j.nima.2007.07.068
http://cds.cern.ch/record/1064030

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