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Total Ionizing Dose effects in 130-nm commercial CMOS technologies for HEP experiments

The impact of foundry-to-foundry variability and bias conditions during irradiation on the Total Ionizing Dose (TID) response of commercial 130-nm CMOS technologies have been investigated for applications in High Energy Physics (HEP) experiments. n- and p-channel MOSFETs from three different manufac...

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Detalles Bibliográficos
Autores principales:	Gonella, L, Faccio, F, Silvestri, M, Gerardin, S, Pantano, D, Re, V, Manghisoni, M, Ratti, L, Ranieri, A
Lenguaje:	eng
Publicado:	2007
Materias:	Detectors and Experimental Techniques Health Physics and Radiation Effects
Acceso en línea:	https://dx.doi.org/10.1016/j.nima.2007.07.068 http://cds.cern.ch/record/1064030

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