Low-temperature TCT characterization of heavily proton irradiated p-type magnetic Czochralski silicon detectors

n+/p−/p+ pad detectors processed at the Microelectronics Center of Helsinki University of Technology on boron-doped p-type high-resistivity magnetic Czochralski (MCz-Si) silicon substrates have been investigated by the transient current technique (TCT) measurements between 100 and 240 K. The detecto...

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Detalles Bibliográficos
Autores principales: Härkönen, J, Tuovinen, E, Luukka, P, Kassamakov, I, Autioniemi, M, Tuominen, E, Sane, P, Pusa, P, Räisänen, J, Eremin, V, Verbitskaya, E, Li, Z
Lenguaje:eng
Publicado: 2007
Materias:
Detectors and Experimental Techniques
Health Physics and Radiation Effects
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2007.08.198
http://cds.cern.ch/record/1064682

Internet

https://dx.doi.org/10.1016/j.nima.2007.08.198
http://cds.cern.ch/record/1064682

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