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CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes
Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficienc...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2007
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2007.08.201 http://cds.cern.ch/record/1064685 |