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Concept of Double Peak electric field distribution in the development of radiation hard silicon detectors
The concept of Double Peak (DP) electric field distribution is considered for the analysis of operational characteristics of irradiated silicon detectors. The key point of the model is trapping of equilibrium carriers to the midgap energy levels of radiation-induced defects, which leads to a non-uni...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2007
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2007.08.228 http://cds.cern.ch/record/1064913 |