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Precise half-life measurement of the Si-26 ground state
The beta-decay half-life of 26Si was measured with a relative precision of 1.4*10e3. The measurement yields a value of 2.2283(27) s which is in good agreement with previous measurements but has a precision that is better by a factor of 4. In the same experiment, we have also measured the non-analogu...
Autores principales: | , , , , , , , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2008
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1140/epja/i2008-10678-2 http://cds.cern.ch/record/1082966 |