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Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons
Abstract A high-purity GaAs sensor of 110 μm thickness has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 keV is presented and compared to the response of a 300 μm thick Si sensor, also...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2008
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2008.03.020 http://cds.cern.ch/record/1111393 |