Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons

Abstract A high-purity GaAs sensor of 110 μm thickness has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 keV is presented and compared to the response of a 300 μm thick Si sensor, also...

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Detalles Bibliográficos
Autores principales: Tlustos, Lukas, Campbell, M, Fröjdh, C, Kostamo, Pasi, Nenonen, Seppo
Lenguaje:eng
Publicado: 2008
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2008.03.020
http://cds.cern.ch/record/1111393
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author Tlustos, Lukas
Campbell, M
Fröjdh, C
Kostamo, Pasi
Nenonen, Seppo
author_facet Tlustos, Lukas
Campbell, M
Fröjdh, C
Kostamo, Pasi
Nenonen, Seppo
author_sort Tlustos, Lukas
collection CERN
description Abstract A high-purity GaAs sensor of 110 μm thickness has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 keV is presented and compared to the response of a 300 μm thick Si sensor, also bonded to a Medipix2 chip. The measured photopeak responses are used to calibrate both detectors. The depth of depletion of the GaAs sensor is estimated to be 50 μm at 140 V sensor bias voltage from measurements made using the 8 keV Kα line of a Cu target X-ray tube.
id cern-1111393
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2008
record_format invenio
spelling cern-11113932019-09-30T06:29:59Zdoi:10.1016/j.nima.2008.03.020http://cds.cern.ch/record/1111393engTlustos, LukasCampbell, MFröjdh, CKostamo, PasiNenonen, SeppoCharacterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photonsDetectors and Experimental TechniquesAbstract A high-purity GaAs sensor of 110 μm thickness has been bump bonded to a Medipix2 readout chip. The room temperature spectroscopic response of this device to fluorescence photons in the energy range from 8 to 28 keV is presented and compared to the response of a 300 μm thick Si sensor, also bonded to a Medipix2 chip. The measured photopeak responses are used to calibrate both detectors. The depth of depletion of the GaAs sensor is estimated to be 50 μm at 140 V sensor bias voltage from measurements made using the 8 keV Kα line of a Cu target X-ray tube.oai:cds.cern.ch:11113932008
spellingShingle Detectors and Experimental Techniques
Tlustos, Lukas
Campbell, M
Fröjdh, C
Kostamo, Pasi
Nenonen, Seppo
Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons
title Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons
title_full Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons
title_fullStr Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons
title_full_unstemmed Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons
title_short Characterisation of an epitaxial GaAs/Medipix2 detector using fluorescence photons
title_sort characterisation of an epitaxial gaas/medipix2 detector using fluorescence photons
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2008.03.020
http://cds.cern.ch/record/1111393
work_keys_str_mv AT tlustoslukas characterisationofanepitaxialgaasmedipix2detectorusingfluorescencephotons
AT campbellm characterisationofanepitaxialgaasmedipix2detectorusingfluorescencephotons
AT frojdhc characterisationofanepitaxialgaasmedipix2detectorusingfluorescencephotons
AT kostamopasi characterisationofanepitaxialgaasmedipix2detectorusingfluorescencephotons
AT nenonenseppo characterisationofanepitaxialgaasmedipix2detectorusingfluorescencephotons

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