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Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection
Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2008
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2008.918519 http://cds.cern.ch/record/1111409 |